Effect of size on eutectic temperature lowering in Ag-Ge layered films

  • А. А. Миненков Харьковский национальный университет имени В. Н. Каразина
  • С. И. Богатыренко Харьковский национальный университет имени В. Н. Каразина
  • А. П. Крышталь Харьковский национальный университет имени В. Н. Каразина
Keywords: eutectic temperature, size effect, in situ TEM, the Ag-Ge binary system, thin films

Abstract

We report the results of the systematic experimental investigation of the eutectic temperature size dependence for Ag-Ge binary system. The Ag-Ge layered films have been produced by sequential deposition of components in vacuum at room temperature. The eutectic temperature TE as a function of Ag film thickness has been measured in a wide range of film thicknesses with use of in situ and ex situ TEM techniques. The significant lowering of TE with the film thickness reduction was registered. In particular, the lowest thickness of the Ag film required for the liquid phase formation at the metalsemiconductor interface was estimated to be ≈1.2 nm, while the onset temperature of this process was found to be ≈200 °C.

 

 

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Author Biographies

А. А. Миненков, Харьковский национальный университет имени В. Н. Каразина
С.н.с.
С. И. Богатыренко, Харьковский национальный университет имени В. Н. Каразина
С.н.с.
А. П. Крышталь, Харьковский национальный университет имени В. Н. Каразина
С.н.с.

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Published
2017-02-24
How to Cite
Миненков, А. А., Богатыренко, С. И., & Крышталь, А. П. (2017). Effect of size on eutectic temperature lowering in Ag-Ge layered films. Journal of Surface Physics and Engineering, 13(3), 383 - 389. Retrieved from https://periodicals.karazin.ua/pse/article/view/8032