The mechanism of current transport in the structure Al-p-CdTe-Mo with different thickness of the base
Abstract
In this paper the mechanism of current’s transport in the structure Al-p-CdTe-Mo is studied, when the thickness of the base w ≤ 10 μm. The results of study of current-voltage characteristics of the structure Al-p-Cd-Te-Mo with different thicknesses of the base and the influence of the thickness of the base on the mechanism of current’s transport are given. The above results at current densities ~8.62∙10–8–4.36∙10–5 A/cm2 and ~5.08∙10–7–2,44∙10–5 A/cm2 for samples No. 1 and No. 2, respectively, were obtained by the theory that takes into account only duffusion components of the current and the applied voltage to the base of the diode structures. At high current densities ~4.36∙10–5–1.95 A/cm2 and ~2.44∙10–5–3.98 A/cm2 for samples No. 1 and No. 2, respectively, results were obtained by the theory of the drift current transport mechanism, taking into account the possibility exchange of free carriers inside the recombination complex.
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