Technology of preparing thin films TbSb2 and the physical properties
Keywords:
film, substrates, sputtering, resistance, Holl constants, thermo emf, mobility
Abstract
A processes has been developed for growth of thin crystiline films by thermal evaporation using Tb and Sb separate sources. Temperature dependences of specific resistance, Holl constsnts and thermo emf are measured in temperature area 100 - 300 K. It is shown that carriers of a charge are electrons and films of TbSb2 on the electric properties are metals.
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References
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Jabua Z. U., Tabatadze I. G., Gigineish vili A. V. - 2011. - Vol. 47, No. 3. - P. 218-222.
Trapaidze I., Jabua Z., Kupreishvili I., Gi gi neishvili A., Iluridze G., Minashvili T., Davitadze K. The absorption speqtra of PrSb2 thin films of golden qolour // 76 Annual Conference of The DPG (Deutschen Physikalischen Gesellshaft) and DPG-fruhjahrstagung 2012 (Spring Meeting) of the Condenced Matter Section (SKM). - Berlin, 2012. - 224 p.
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Eatough N. L., Hall Y. T. High pressure synthesis of rare earth diantimonides // Inorg. Chem. - 1969. - Vol. 8. - P. 1439-1445.
Travaglini G., Wachter P. Low-energy electronic structure of intermediate-valence «golden» SmS // Phys. Rev. - 1984. - Vol. 30, No. 10. - P. 5877-5881.
Фарберович О. В. Зонная структура и фазовый переход полупроводник-металл в соединении SmS // ФТТ. - 1979. - Т. 21. - C. 3434-3439.
Published
2017-02-16
How to Cite
Джабуа, З. У. (2017). Technology of preparing thin films TbSb2 and the physical properties. Journal of Surface Physics and Engineering, 1(2), 170-174. Retrieved from https://periodicals.karazin.ua/pse/article/view/7912
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