Formation of a regular porous p-InP structure
Keywords:
porous InP; anode electrochemical etching; scanning electronic microscopy; energy dispersive X-ray spectroscopy
Abstract
The necessity of lighting p-InP samples during anodization in a solution of hydrochloric acid to obtain a uniform ensemble of pores on the surface of the crystal. The optimal conditions for the formation of regular structure of the porous layer of indium phosphide p-type. Obtain samples with a pore diameter of 30 – 40 nm. The formation of the oxide layer on the surface of the crystals was not observed, which is the desired outcome in obtaining nanomaterials.
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References
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Kidalov V.V., Beji L., Sukach G.A. Optical properties of p-type porous GaAs//Semiconductors physics quantum electronics & optoelectronics. – 2006. – Vol. 8, №. 4 – P. 129-135.
Langa S., Tiginyanu I.M., Carstensen J., Christophersen M., and Foll H. Self-organized growth of single crystals of nanopores//Applied Physics Letters. – 2003. – Vol. 8, № 2. – P. 278-280.
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Hollinger G., Berngignat E., Joseph J., Robach Y. On the nature of oxides on InP surfaces//Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. – 1985. – Vol. 3, № 6. – P. 2082-2088.
Улин В.П., Конников С.Г. Природа процессов электрохимического порообразования в кристаллах A IIIB V// ФТП. – 2007. – Т. 41, № 7. – C. 854-867.
Published
2019-07-26
How to Cite
Сычикова, Я. А., Кидалов, В. В., & Сукач, Г. А. (2019). Formation of a regular porous p-InP structure. Journal of Surface Physics and Engineering, 8(1), 81-87. Retrieved from https://periodicals.karazin.ua/pse/article/view/13454
Section
Статті
У відповідності з типовим шаблоном.
