The influence of the magnetron sputtering regime and the composition of the reaction gas on the structure and properties of ITO films
Keywords:
ITO films, magnetron sputtering, preferred orientation, electrical resistance, transparency, band energy gap
Abstract
The influence of substrate temperature, composition of the working gas and DC and MF modes of reactive magnetron sputtering of an alloy 90%In + 10%Sn on the structural state, electrical resistance, transparency, and the band gap of the films ITO, deposited on glass substrates have been studied. The dependence of electron-optical properties of ITO films on the conditions of their production explains by the influence of the relaxation of internal stresses and crystallinity.
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References
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Oka N., KawaseYu., Shigesato Yu. High-rate deposition of high-quality Sn-doped In2O3 films by reactive magnetron sputtering using alloy targets//Thin Solid Films. – 2012. – Vol. 520. – P. 4101-4105.
Marcovitch O., KleinZ., LubezkyI. Transparent conductive indium oxide film deposited on low temperature substrates by activated reactive evaporation//Applied Optics. – 1989. – Vol. 28, № 14. – Р. 2792-2795.
Balasubramanian N., Subrahmanyam A. Electrical and optical properties of reactively evaporated indium tin oxide (ITO) films dependence on substrate temperature and tin concentration//J. Phys. D: Appl. Phys. – 1989. – Vol. 22. – P. 206-209.
Legeay G.A., Castel X. A gradual annealing of amorphous sputtered indium tin oxide: Crystalline structureand electrical characteristics//Thin Solid Films. – 2012. – Vol. 520. – P. 4121-4125.F
Meng L.J., dos Santos M.P. Properties of indium tin oxide (ITO) films prepared by r.f. reactive magnetron sputtering at different pressures//Thin Solid Films. – 1997. – Vol. 303. – P. 151-155
Tului M., Bellucci A., Bellini S., Albolino A., Migliozzi G. Indium tin oxide coatings properties as a function of the depositionatmosphere//Thin Solid Films. – 2012. – Vol. 520. – P. 4041-4045.F
Strumpfeli J., May C.,Low ohm large area ITO coating by reactive magnetron sputtering in DC and MF mode//Vacuum. – 2000. – Vol. 59. – Р. 500-505.
Юрченко Г.В.. Электрические и оптические свойства пленок ITO, полученных методом магнетронного распыления//ВАНТ. – 2000. – № 5. – С. 97-98.9l, M.P.
Горелик С.С., Скаков Ю.А., Расторгуев Л.Н. Рентгенографический и электроннографический анализ. – М.: МИСИС, 2002. – 360 с.
Pradhan D., Leung K.T. Vertical Growth of TwoDimensional Zinc Oxide Nanostructures on ITOCoated Glass: Effects of Deposition Temperature and Deposition Time//J. Phys. Chem. C. – 2008. – Vol. 112, № 5 – P. 1357-1364.
Мосс Г., Баррелл Т. Полупроводниковая оптоэлектроника. – М.: Мир, 1976. – 432 с.
Published
2012-10-08
How to Cite
Бажин, А. И., Троцан, А. Н., Чертопалов, С. В., Стипаненко, А. А., & Ступак, В. А. (2012). The influence of the magnetron sputtering regime and the composition of the reaction gas on the structure and properties of ITO films. Journal of Surface Physics and Engineering, 10(4), 342 - 349. Retrieved from https://periodicals.karazin.ua/pse/article/view/10074
Section
Статті
У відповідності з типовим шаблоном.
