Electrical properties of stacks of many long Josephson junctions
Abstract
We investigated numerically IV-characteristics and power of emission from stacks with various quantities of long Josephson junctions (up to 6 junctions) which interacted inductively with each other. Parameters of junctions were chosen close to those for MoRe-Si(W)-MoRe heterostructures. We set Gaussian spread of about 0.01% of critical currents along junctions. Electrical properties of a stack consisted of three junctions was investigated in details. Zero-fi eld steps at voltages corresponding to frequencies of various modes of electromagnetic waves in the stack were found in the IV-characteristic. We showed that positions of zero-fi eld steps in IV-curves were in good agreement with predictions of the theory. The highest maximum of power of emission corresponded to the so-called in-phase mode at which all voltages over junctions in the stack oscillate in-phase. Considering stacks with many junctions, we showed that power of emission at the voltage of the resonance which corresponds to the in-phase mode is proportional to the square of quantity of long junctions in the stack that is the characteristic of coherent emission.
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