INTRINSIC POINT DEFECTS IN ANISOTROPIC CRYSTALLINE SYSTEMS (QUASI-TWO NbSe2 AND QUASI-ONE NbSe3)
Abstract
Established that the resulting of heat treatment of single crystals of NbSe2 and NbSe3 formed selenium vacancies. With the complex investigation of the temperature dependences of resistance NbSe3 and NbSe2 in different environments (air, vacuum, argon vapor selenium) in the field of 300 - 550 K, the investigations of the relative change of the linear dimensions NbSe2, and the X-ray diffraction investigations have shown that during heat treatment NbSe3 and NbSe2 formation of selenium vacancies, which cause a deviation from the linear dependence of the resistance. The presence of selenium vacancies decreases the dimensions of the samples along NbSe2 layers and increases the lattice parameters. Found that the effective energy of vacancy selenium in quasi-single crystals NbSe2 decreases on the exposure time, that is, with increasing concentration of vacancies of selenium.
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References
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