Lateral Photoeffect in Metal–Oxide–Semiconductor Structures Based on Monocrystalline Silicon
Abstract
This paper presents the fabrication technology and experimental results of the lateral photoeffect (LPE) study in Co/SiO₂/n-Si⟨P, Zn⟩ metal-oxide-semiconductor (MOS) structures. The structures were prepared based on initial n-type silicon samples (ρ=1.05 Ω×cm), thermally annealed samples (ρ=1.07 Ω×cm), and highly Zn-compensated n-type silicon samples with specific resistivities of 5.04 Ω×cm, 156.86 Ω×cm, and 1800 Ω×cm, respectively. According to the experimental results, the dependence of the lateral photovoltage (LPV) magnitude on the distance between the contacts in the fabricated MOS structures exhibits a linear character. It was found that the maximum value of the lateral photovoltage increases significantly with increasing specific electrical resistivity in highly Zn-compensated n-type silicon samples. In particular, for the sample with ρ = 1800 Ω×cm, the maximum LPV reached ±16.83 mV at a distance of ±2.3 mm. This result demonstrates the high sensitivity of the LPE in structures based on highly compensated silicon. The obtained results are in good agreement with the energy band diagrams that consider the influence of deep energy levels associated with zinc atoms at the SiO₂/Si interface and the charge carrier concentration.
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