Comparative Analysis of Incomplete Ionization Effects in P-SiC/n-Ga₂O₃ and P-GaN/n-Ga₂O₃ Heterojunctions Over 77–400 K
Abstract
This study presents a comprehensive comparative investigation of wide-bandgap heterojunctions p-SiC/n-Ga₂O₃ and p-GaN/n-Ga₂O₃, with particular emphasis on the influence of incomplete dopant ionization over the temperature range of 77–400 K. The temperature-dependent bandgap energies of GaN, SiC, and Ga₂O₃ were modeled using the Varshni relation, yielding excellent agreement with reported experimental data, with correlation coefficients (R²) of 0.981, 0.975, and 0.978, respectively. The calculated bandgaps decreased slightly with increasing temperature, varying from 3.51 to 3.40 eV for GaN, 3.33 to 3.25 eV for SiC, and 4.90 to 4.87 eV for Ga₂O₃. Corresponding heterojunction band offsets were determined to be approximately 1.36–1.50 eV for Ga₂O₃/GaN and 1.57‑1.62 eV for Ga₂O₃/SiC, confirming the consistency and reliability of the adopted band-alignment model. Electric-field analysis demonstrated strong thermal robustness in both heterostructures. The maximum electric field reached 3.92 × 10⁵ V/cm for the p-GaN/n-Ga₂O₃ heterojunction and 3.98×10⁵ V/cm for the p-SiC/n-Ga₂O₃ heterojunction at 77 K, while exhibiting less than a 3% variation up to 400 K. In addition, the electric field showed a predictable dependence on doping concentration, increasing from approximately 25 kV/cm to 80 kV/cm as the doping level increased from 2×10¹⁴ to 2×10¹⁶ cm⁻³. At room temperature, the p-GaN/n-Ga₂O₃ heterojunction exhibited slightly higher electric-field strength due to its larger conduction-band offset, whereas the p-SiC/n-Ga₂O₃ structure demonstrated enhanced low-temperature performance attributed to incomplete dopant ionization and the resulting carrier redistribution effects. The results provide new insight into the influence of incomplete dopant ionization on the temperature-dependent behavior of p-SiC/n-Ga₂O₃ and p-GaN/n-Ga₂O₃ heterojunctions, providing a theoretical basis for the design of wide-bandgap power devices. These characteristics highlight the strong potential of Ga₂O₃-based heterojunctions for next-generation high-voltage and high-temperature power electronic applications, including electric-vehicle power converters, aerospace electronics, and harsh-environment industrial systems. Nevertheless, further studies incorporating interface-state effects, breakdown-voltage analysis, leakage-current mechanisms, thermal resistance, and long-term reliability assessments are required to fully evaluate their practical device performance and optimize heterojunction design.
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