Study of the Formation of Radiation Defects in Irradiated Silicon Samples, Doped with Chromium Atoms
Abstract
This work presents an investigation of radiation-induced defect formation in single-crystal n-type silicon doped with chromium (n-Si<Cr>) using positron annihilation spectroscopy. The initial silicon samples, phosphorus-doped during crystal growth, were subsequently modified by chromium diffusion and then irradiated with 2 MeV protons at a beam current of 0.5 μA using the EG-5 accelerator facility. The measurements revealed the formation of characteristic radiation-induced vacancy-type defects, including A-centers, E-centers, divacancies, and their stable complexes. A comparative analysis of chromium-doped and undoped samples demonstrated a pronounced difference in the accumulation rate of these defects. It was established that the presence of chromium atoms in the bulk of n-type silicon significantly suppresses radiation defect formation: the concentration of vacancy-related defects in n-Si<Cr> was found to be approximately 1.5–2 times lower than in the reference n-Si samples irradiated under identical conditions. These results confirm that chromium doping enhances the radiation resistance of silicon and can be considered an effective approach for modifying semiconductor materials intended for operation in environments with high radiation exposure.
Downloads
References
M. Akramov, B. Eshchanov, S. Usanov, Sh. Norbekov, and D. Matrasulov, “Second-harmonic generation in branched optical waveguides: Metric graphs-based approach,” Physics Letters A, 524, 129827 (2024). https://doi.org/10.1016/j.physleta.2024.129827
J.R. Yusupov, M. Ehrhardt, Kh.Sh. Matyokubov, and D.U. Matrasulov, “Driven transparent quantum graphs,” Physica Scripta, 100(7), (2025). https://doi.org/10.1088/1402-4896/ade014
N.Yu. Sharibaev, A.Q. Ergashov, S.B. Fazliddinov, R.G. Ikramov, M.A. Yuldoshev, and A.A. Abdulxayev, “Photoelectric characteristics of TiO2-based on thin-film solar elements with ruthenium (II) compounds,” Journal of Ovonic Research, 21(6), (2025). https://doi.org/10.15251/JOR.2025.216.859
W.A. Mussawi, N.S.S. Singh, S.G. Waheedullah, E. Muniyandy, B. Madaminov, S. Usanov, M. Latipova, H.A. El-Sabbani, M.A. Diabk, A. Smerat, Sh.M. Qasim, “Design and supported gold nanoparticles over the modified magnetic iron oxide nanoparticles as an effective nanocatalyst for Suzuki-Miyaura reactions,” Journal of Organ-ometallic Chemistry 1042, 123863 (2025). https://doi.org/10.1016/j.jorganchem.2025.123863
Sh.B. Utamuradova, Z.T. Azamatov, A.I. Popov, M.R. Bekchanova, M.A. Yuldoshev, and A.B. Bakhromov, “Study of Optical, Electrophotographic and Holographic Parameters of As-Se Condensates from the Prehistory of the Original Bulk Materials,” East Eur. J. Phys. (3), 278 (2024). https://doi.org/10.26565/2312-4334-2024-3-27
F.A. Giyasova, A.Z. Rakhmatov, Kh.N. Bakhronov, M.A. Yuldoshev, F.A. Giyasov, A.N. Olimov, and N.A. Sattarov, “Physical Principles of Photocurrent Generation in a Silicon-Based Photodiode Structure with a Schottky Barrier,” East Eur. J. Phys. (4), 397 (2025), https://doi.org/10.26565/2312-4334-2025-4-38
F.A. Giyasova, Kh.N. Bakhronov, M.A. Yuldoshev, I.B. Sapaev, R.G. Ikramov, F.A. Giyasov, M.R. Bekchanova, et al., “Study of the Influence of Temperature on the Transitions of the CdS/Si/CdTe Heterosystem,” East Eur. J. Phys. (4), 461 (2025). https://doi.org/10.26565/2312-4334-2025-4-47
Sh. B. Utamuradova, D.A. Rakhmanov, and A.S. Abiyev, “Investigation of Sensitive Thermal Sensors Based on Si and Si,” East Eur. J. Phys. (3), 375 (2024). https://doi.org/10.26565/2312-4334-2024-3-45
M, Golosov, V. Lozanov, and N. Baklanova, “The study of the iridium – silicon carbide reaction by Raman and IR spectroscopy,” Materials Today: Proceedings, 25, 352-355 (2019). https://doi.org/10.1016/j.matpr.2019.12.088
P.R. Berger, G. Gulyamov, M.G. Dadamirzaev, M.K. Uktamova, and S.R. Boidedaev, Romanian Journal of Physics, 69, 609 (2024), https://doi.org/10.59277/RomJPhys.2024.69.609
A.A. Lebedev, and V.V. Kozlovskiy, “On comparison of the radiation resistance of silicon and silicon carbide,” Semiconductors, 48(10), 1329–1331 (2014). https://doi.org/10.1134/S1063782614100170
Sh.B. Utamuradova, Sh.Kh. Daliev, D.A. Rakhmanov, A.B. Uteniyazova, and A.S. Abiyev, “Raman Spectroscopy of Gamma-Irradiated Silicon Doped with Rhodium,” East Eur. J. Phys. (4), 696 (2025). https://doi.org/10.26565/2312-4334-2025-4-75
A.A. Istratov, H. Hieslmair, and E.R. Weber, “Iron contamination in silicon technology,” Appl Phys A, 70, 489–534 (2000). https://doi.org/10.1007/s003390051074
Sh.B. Utamuradova, Sh.Kh. Daliev, D.A. Rakhmanov, A.S. Doroshkevich, I.G. Genov, P.L. Tuan, and А. Kirillov, Euroasian physical technical journal, 20(3(45)), 35–42 (2023). https://doi.org/10.31489/2023No3/35-42
M.K. Uktamova, Sh. Mamadaliev, “Three-dimensional modeling of the relationship between static tunneling and the optical absorption coefficient in tunnel diodes,” Results in optics. Vol 22, 100950 (2026). https://doi.org/10.1016/j.rio.2025.100950
Sh.B. Utamuradova, F.A. Giyasova, K.N. Bakhronov, M.A. Yuldoshev, M.R. Bekchanova, and B. Ismatov, “Current Transfer Mechanism in a Thin-Based Heterosystem Based on A2B6 Compounds,” East Eur. J. Phys. (3), 325-335 (2025). https://doi.org/10.26565/2312-4334-2025-3-31
I. Pintilie, G. Lindström, A. Junkes, and E. Fretwurst, “Radiation-induced point- and cluster-related defects with strong impact on damage properties of silicon detectors,” Nuclear Instruments and Methods in Physics Research A, 611, 52–68 (2009). https://doi.org/10.1016/j.nima.2009.09.065
F.A. Giyasova, and M.A. Yuldoshev, “Investigation of temporal characteristics of photosensitive heterostructures based on gallium arsenide and silicon,” Chalcogenide Letters, 22(2), 123–129 (2025). https://doi.org/10.15251/CL.2025.222.123
Sh.B. Utamuradova, S.A. Muzafarova, A.M. Abdugofurov, K.M. Fayzullaev, E.M. Naurzalieva, and D.A. Rakhmanov, Applied Physics, (4), 81-86 (2021). https://applphys.orion-ir.ru/appl-21/21-4/PF-21-4-81.pdf
F.A. Selim, “Positron annihilation spectroscopy of defects in nuclear and irradiated materials- a review,” Materials Characterization, 174, 110952 (2021). https://doi.org/10.1016/j.matchar.2021.110952
V.A. Kozlov, and V.V. Kozlovskiy, Semiconductors, 35(7), (2001), http://journals.ioffe.ru/articles/viewPDF/37060
M.G. Dadamirzaev, M.K. Uktamova, S. Rakhmanova, G.A. Ibadullayev, East Eur. J. Phys. 4, 675 (2025), https://doi.org/10.26565/2312-4334-2025-4-73
Sh.B. Utamuradova, Kh.S. Daliev, Sh.Kh. Daliev, and K.M. Fayzullaev, Applied Physics, (6), 90–95 (2019). (in Russian)
F. Tuomisto, Springer Handbook of Crystal Growth, Defects and Characterization, (Springer-Verlag, New York, 2010). http://dx.doi.org/10.1016/B978-0-12-396489-2.00002-3
R.S. Brusa, C. Macchi, S. Mariazzi, and G.P. Karwasz, “Porosity of Low-Materials Studied by Slow Positron Beam,” Acta physica polonica A, 107(4), 702 (2005). https://www.researchgate.net/publication/241562432
M.A. Huis, A. Veen, H. Schut, C.V. Falub, S.W.H. Eijt, and P.E. Mijnarends, “Positron confinement in embedded lithium nanoclusters,” Physical review B, 65, 085416 (2002). https://doi.org/10.1103/PhysRevB.65.085416
S.F. Samadov, N.V.M. Trung, A.A. Sidorin, S.I. Ibragimova, S.H. Jabarov, M.A. Yuldoshev, O.S. Orlov, et al., “Effect of Zn and Fe doping on vacancy cluster formation in Cu–In–Se system,” Micro and Nanostructures, 209, 208451 (2026). https://doi.org/10.1016/j.micrna.2025.208451
Copyright (c) 2026 Sh.I. Nabiyev, Kh.N. Bozorov, A. Nasritdinov, R.G. Ikramov, M.A. Yuldoshev, N.A. Sattarov, U. Edilboyev, S.M. Adilkhan, S.A. Tursinbaev, A.E. Otarbaev, S.M. Kasimov
This work is licensed under a Creative Commons Attribution 4.0 International License.
Authors who publish with this journal agree to the following terms:
- Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgment of the work's authorship and initial publication in this journal.
- Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgment of its initial publication in this journal.
- Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).
