THE FORMATION OF TOPOLOGICAL DEFECTS ON GRAPHITE’S SURFACE

  • V. G. Kirichenko Kharkiv National Karazin University 4 Svobody Sq., Kharkiv, 61022, Ukraine

Abstract

On the basis of experimental data on scanning tunneling microscopy graphite surface on the assumption that the collective nature of the formation of atomically smooth surface of graphite in the cell (7x7) is simulated in a monoatomic layer defects such as disclination, edge dislocation and grain boundary. The simulation results from defects in the monoatomic layer of graphite are significantly different from those observed topological defects in graphene.

 

Downloads

Download data is not yet available.

Author Biography

V. G. Kirichenko, Kharkiv National Karazin University 4 Svobody Sq., Kharkiv, 61022, Ukraine
 

References

Novoselov K.S. et al. Electric Field Effect in Atomically Thin Carbon Films // Science. – 2004. – Vol.306. – P.666. DOI:10.1126/ science.1102896.

Yazyev O.V., Louie S.G. Electronic transport in polycrystalline grapheme // Nature Materials. – 2010. – Vol. 9. – P.806-809.

Yazyev O.V., Louie S.G. Topological defects in graphene: Dislocations and grain boundaries // Phys. Rev. B. 2010. –Vol. 81. – P. 195420.

Kirichenko V.G., Mel'nikova E.S. Osobennosti struktury nanometricheskih poverhnostnyh sloev grafita // The Journal of Kharkiv National University, physical series “Nuclei, Particles, Fields”. – 2009. – No.878. – Iss.4(44). - S.79-85.

Ramstad A., Brocks G., Kelly P.J. Theoretical study of Si (100) surface reconstruction // Phys. Rev. – 1995. – Vol.51, No.20. - P.14504.

Belenkov E.A., Zinatulina Ju.A. Topologicheskie defekty grafenovyh slojov // lib.csu.ru/vch/126/005.pdf.

Kochnev A.S., Ovid'ko I.A., Semenov B.N. Mehanicheskie harakteristiki grafena s ansambljami 5-8-5 defektov vysokoj plotnosti //Materials Physics and Mechanics. - 2014. – Vol. 21. – P.275-282.

Published
2015-06-13
Cited
0 article
How to Cite
Kirichenko, V. (2015). THE FORMATION OF TOPOLOGICAL DEFECTS ON GRAPHITE’S SURFACE. East European Journal of Physics, 2(1), 71-76. https://doi.org/10.26565/2312-4334-2015-1-11