Photoelectric Properties of ZnₓCd₁-ₓS-Based Photosensitive Semiconductor Structures with Enhanced Ultraviolet Response
Abstract
The work is devoted to the study of the photoelectric characteristics of an Au-ZnxCd1-xS-Mo structured film injection photodetector sensitive in the ultraviolet and visible region of the spectrum of electromagnetic radiation, with maximum sensitivity in the utraviolet region. It has been established that the spectral sensitivity of the Au-ZnxCd1-xS-Mo structured film injection photodetector depends on the temperatures on the ZnS and CdS evaporators, which affect the composition of the photoactive layer ZnxCd1-xS (x= zn / (Zn + Cd)) in Au-ZnxCd1-xS-Mo -structured film injection photodetector. By changing the temperature on the ZnS evaporator, during the growth of the ZnxCd1-xS layer, a ZnxCd1-xS layer was synthesized on a molybdenum substrate, which served as a photoactive layer for the Au-ZnxCd1-xS-Mo photodetector. The created photodetector had sensitivity in the ultraviolet and visible regions of the spectrum of electromagnetic radiation, the maximum value of which was in the ultraviolet region. An analysis of the spectral sensitivity indicates that in the created photodetector the photoactive layer is graded-gap, the band gap of which decreases from Eg = 3.05 eV to Eg = 2.45 eV . A study of light current-voltage characteristics for monochromatic radiation showed that they are characterized by different values of the diode ideality factor ( n) and reverse saturation current (Jo ). The synthesized ZnxCd1-xS layer can be used as a buffer layer in thin-film solar cells, such as CdTe, CIGS and others, instead of the CdS layer, which will make it possible to increase both the short-circuit current value and the open-circuit voltage of thin-film solar cells.
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