Phase Transformations and Structural Transformations of Manganese Silicides in the Si-Mn System

  • Sh.B. Utamuradova Institute of Semiconductor Physics and Microelectronics, National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0002-1718-1122
  • Sh.Kh. Daliev Institute of Semiconductor Physics and Microelectronics, National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0001-7853-2777
  • J.J. Khamdamov Institute of Semiconductor Physics and Microelectronics, National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0003-2728-3832
  • Kh.J. Matchonov Institute of Semiconductor Physics and Microelectronics, National University of Uzbekistan, 20 Yangi Almazar st., Tashkent, Uzbekistan https://orcid.org/0000-0002-8697-5591
  • A.Kh. Khaitbaev Institute of Semiconductor Physics and Microelectronics, National University of Uzbekistan, Tashkent, Uzbekistan
DOI: https://doi.org/10.26565/2312-4334-2025-4-49
Keywords: Silicon, Manganese, Manganese Silicides, MnSi, Mn₄Si₇, Phase transformations, XRD, Raman, SEM–EDS, DLTS, CALPHAD, Gibbs free energy

Abstract

A comprehensive investigation of thermally induced phase transformations in the silicon-manganese (Si–Mn) system was conducted. The study utilized X-ray diffraction (XRD), Raman spectroscopy (including chemical Raman mapping), scanning electron microscopy with energy-dispersive X-ray spectroscopy (SEM–EDS), deep-level transient spectroscopy (DLTS), and thermodynamic CALPHAD modeling. The sequence of transformations has been reliably reconstructed as follows: (i) interstitial incorporation of Mn and partial amorphization of the near-surface Si layer; (ii) nucleation and growth of MnSi (B20 structure, P2₁3); (iii) stabilization of the higher silicide phase Mn₄Si₇ under Si-rich conditions; (iv) at T ≫ 900 °C, a partial reverse transformation to MnSi. DLTS analysis revealed three electrically active deep-level centers with activation energies of Eс–0.53 eV, Eс–0.43 eV, and Eс–0.20 eV (σn ≈ 10⁻¹⁶–10⁻¹⁵ cm²), which correlate with the MnSi → Mn₄Si₇ transition and interface traps at the “silicide/Si” boundary. CALPHAD modeling confirmed negative Gibbs free energies of formation (ΔGf) and identified thermodynamic stability windows for MnSi (600–750 °C) and Mn₄Si₇ (800–950 °C). The resulting process map provides the technological parameters for synthesizing CMOS-compatible Si–Mn structures.

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Author Biography

Kh.J. Matchonov, Institute of Semiconductor Physics and Microelectronics, National University of Uzbekistan, 20 Yangi Almazar st., Tashkent, Uzbekistan

Head of International Cooperation Department of Semiconductor Physics

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Published
2025-12-08
Cited
How to Cite
Utamuradova, S., Daliev, S., Khamdamov, J., Matchonov, K., & Khaitbaev, A. (2025). Phase Transformations and Structural Transformations of Manganese Silicides in the Si-Mn System. East European Journal of Physics, (4), 484-495. https://doi.org/10.26565/2312-4334-2025-4-49
Issue
No. 4 (2025): East European Journal of Physics
Section
Original Papers

Copyright (c) 2025 Sh.B. Utamuradova, Sh.Kh. Daliev, J.J. Khamdamov, Kh.J. Matchonov, A.Kh. Khaitbaev

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