Impact of Ruthenium Diffusion on the Electrical Properties of Thick Film Resistors

  • Avazbek T. Dekhkonov National University of Uzbekistan named after Mirzo Ulugbek, Tashkent, Uzbekistan https://orcid.org/0009-0000-8507-2617
  • Gulmurza Abdurakhmanov National University of Uzbekistan named after Mirzo Ulugbek, Tashkent, Uzbekistan https://orcid.org/0000-0002-0656-1859
  • Mukhriddin E. Tursunov National University of Uzbekistan named after Mirzo Ulugbek, Tashkent, Uzbekistan https://orcid.org/0009-0005-6356-7252
  • Shokhzod M. Norbekov Tashkent Institute of Management and Economics, Tashkent, Uzbekistan; Almalyk Branch of Tashkent State Technical University, Almalyk, Tashkent Region, Uzbekistan https://orcid.org/0000-0001-8204-6923
  • Dilnoza G. Tashmukhamedova Tashkent State Technical University named after Islom Karimov, Tashkent, Uzbekistan https://orcid.org/0000-0001-5813-7518
  • Gulbakhor Vokhidova Alfakom Non-state Training Center, Tashkent, Uzbekistan
  • Dibya Prakash Rai Department of Physics, Mizoram University, Aizawl, India https://orcid.org/0000-0002-3803-8923
  • Ummat A. Asrorov National Pedagogical University of Uzbekistan named after Nizami, Tashkent, Uzbekistan; National University of Uzbekistan named after Mirzo Ulugbek, Tashkent, Uzbekistan https://orcid.org/0009-0009-6800-7392
DOI: https://doi.org/10.26565/2312-4334-2025-3-38
Keywords: Beveled sample, Diffusion layer, Diffusion coefficient, Resistance distribution, Diffusion profile

Abstract

The diffusion profile of the RuO2 into silicate glass and the electrical resistance distribution across diffusion layer have been studied by beveled sample method and energy dispersion spectroscopy. The distribution of content of Ru atoms in the diffusion layer is described by the erfc(x) what means that the diffusion coefficient is independent of the content of Ru atoms. The correlation of the distribution of Ru atom content and the resistance distribution in the diffusion layer showed that it is the diffusion doping of glass that is responsible for the conductivity of thick-film resistors. Thickness of the diffusion layer is more than 100 μm while average distance between RuO2 particles is about 0.5-2 μm. It means that all volume of the thick-film resistor comes conductive in firing process at 850°C in 10 minutes.

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Published
2025-09-08
Cited
How to Cite
Dekhkonov, A. T., Abdurakhmanov, G., Tursunov, M. E., Norbekov, S. M., Tashmukhamedova, D. G., Vokhidova, G., Rai, D. P., & Asrorov, U. A. (2025). Impact of Ruthenium Diffusion on the Electrical Properties of Thick Film Resistors. East European Journal of Physics, (3), 375-381. https://doi.org/10.26565/2312-4334-2025-3-38
Issue
No. 3 (2025): East European Journal of Physics
Section
Original Papers

Copyright (c) 2025 Avazbek T. Dekhkonov, Gulmurza Abdurakhmanov, Mukhriddin E. Tursunov, Shokhzod M. Norbekov, Dilnoza G. Tashmukhamedova, Gulbakhor Vokhidova, Dibya Prakash Rai

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