Morphology and Electrical Properties of ITO Films Obtained on Silicon Substrates by CVD Method
Abstract
ITO films were obtained on silicon substrates using an improved chemical vapor deposition (CVD) method in a quasi-enclosed volume at normal atmospheric pressure, without using a carrier gas. The resulting films had a thickness of 2.8–3.0 microns and a fairly low sheet resistance. Using an SPM 9700HT type scanning probe microscope, the surfaces of 500×500 nm ITO film samples were examined, and the results are presented in the form of two-dimensional (2D) and three-dimensional (3D) images. The electrophysical properties of the grown films were studied by the Hall method and it was shown that the films have an n-type conductivity, a mobility of m ≈ 2.5 cm2/(V×s) and a concentration of charge carriers n ≈ 1.35×1020 cm-3 and a sheet resistance of r ≈ 1.85×10-5 W×sq-1 (ohms per square). It is shown that our modified method of chemical vapor deposition makes it possible to obtain ITO films with good characteristics acceptable for use in optoelectronics and photovoltaics devices as a transparent contact layer.
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G.S. Belo, B.J.P. da Silva, E.A. de Vasconcelos, W.M. de Azevedo, and Jr. E.F. da Silva , “A simplified reactive thermal evaporation method for indium tin oxide electrodes,” Appl. Surf. Sci. 255, 755 (2008.). https://doi.org/10.1016/j.apsusc.2008.07.020
Yu.S. Zhidik, and P.E. Troyan, “Processing technique of reception of electroconducting ITO films of a high optical transparency with low value of per-unit-area resistance,” Proceedings of TUSUR University, 26(2), 169 (2012). https://journal.tusur.ru/en/archive/2-2-2012
X. Guo, X. Liu, F. Lin, H. Li, Y. Fan, and N. Zhang, “Highly Conductive Transparent Organic Electrodes with Multilayer Structures for Rigid and Flexible Optoelectronics,” Sci. Rep. 5, 10569 (2015). https://doi.org/10.1038/srep10569
T. Neubert, F. Neumann, K. Schiffmann, P. Willich, and A. Hangleiter, “Investigations on oxygen diffusion in annealing processes of non-stoichiometric amorphous indium tin oxide thin films,” Thin Solid Films, 513, 319 (2006). https://doi.org/10.1016/j.tsf.2006.02.007
L.K. Markov, I.P. Smirnova, A.S. Pavlyuchenko, E.M. Arakcheeva, and M.M. Kulagina, “Reflecting p-contact based on thin ITO films for AlGaInN flip-chip LEDs,” Semicond. 43, 1521 (2009). https://doi.org/10.1134/S1063782609110219.
A.K. Isiyaku, A.H. Ali, and N. Nayan, “Structural Optical and Electrical Properties of a Transparent Conductive ITO/Al–Ag/ITO Multilayer Contact,” Beilstein J. Nanotechnol. 11, 695 (2020). https://doi.org/10.3762/bjnano.11.57
J. Lewis, S. Grego, B. Chalamala, E. Vick, and D. Temple, “Highly flexible transparent electrodes for organic lightemitting diode-based displays,” Appl. Phys. Lett. 85(16), 3450 (2004). http://apl.aip.org/resource/1/applab/v85/i16/p3450_s1
U. Betz, M.K. Olsson, J. Marthy, J. Escola, and F. Atamny, “Thin films engineering of indium tin oxide: Large area flat panel displays application,” Surf. Coat. Technol. 200, 5751 (2006). https://doi.org/10.1016/j.surfcoat.2005.08.144
K. Dasgupta, S. Bose, A. Mondal, S. Jana, and U. Gangopadhyay, “Fabrication and Mathematical Modelling of a ITO-Al2O3-Si SIS Solar Cell,” Silicon, 14, 11963 (2022). https://doi.org/10.1007/s12633-022-01910-5
W-H. Park, and J. Kim, “Transparent and conductive multi-functional window layer for thin-emitter Si solar cells,” Mat. Express, 6(5), 451–455 (2016). https://doi.org/10.1166/mex.2016.1331
Z. Yu, I. Perera, T. Daeneke, S. Makuta, Y. Tachibana, J.J. Jasieniak, A. Mishra, et al., “Indium tin oxide as a semiconductor material in efficient p-type dye-sensitized solar cells,” NPG Asia Mater, 8, e305 (2016). https://doi.org/10.1038/am.2016.89
B. Parida, H.Y. Ji, G.H. Lim, and S. Park, and K. Kim, “Enhanced photocurrent of Si solar cell with the inclusion of a transparent indium tin oxide thin film,” J. Renew. Sustain. Energy, 6(5), 053120 (2014). https://doi.org/10.1063/1.4897656
K. Ryu, Y-J. Lee, M. Ju, H. Choi, B. Kim, J. Lee, W. Oh, et al., “Optimal Indium Tin Oxide Layer as Anti Reflection Coating for Crystalline Silicon Solar Cell with Shallow Emitter,” Thin Solid Films, 521, 50 (2012). https://doi.org/10.1016/j.tsf.2012.03.073
S. Calnan, and A.N. Tiwari. “High mobility transparent conducting oxides for thin film solar cells,” Thin Solid Films, 518, 1839 1849 (2010). https://doi.org/10.1016/j.tsf.2009.09.044
N. Vieira, E. Fernandes, A.A.A. De Queiroz, and F.E.G. Guimarães, “Indium tin oxide synthesized by a low cost route as SEGFET pH Sensor,” Mater. Res. 16(5), 1156 (2013). https://doi.org/10.1590/S1516-14392013005000101
A.K. Isiyaku, A.H. Ali, S.G. Abdu, M. Tahan, N.A. Raship, A.S. Bakri, and N. Nayan, “Characterization and Optimization of Transparent and Conductive ITO Films Deposited on n and p-types Silicon Substrates,” Phys. Memoir. J. Theor. Appl. Phys. 2(1), 15 (2020).
D. Shcherbinin, V. Rybin, S. Rudyi, A. Dubavik, S. Cherevkov, Y. Rozhdestvensky, and A. Ivanov, “Charged Hybrid Microstructures in Transparent Thin-Film ITO Traps: Localization and Optical Control,” Surfaces, 2023, 6 133–144. https://doi.org/10.3390/surfaces6020010
M.N. Rezaie, N. Manavizadeh, E.M.N. Abadi, E. Nadimi, and F.A. Boroumand, “Comparison study of transparent RF-sputtered ITO/AZO and ITO/ZnO bilayers for near UV-OLED applications,” Appl. Surf. Sci. 392, 549 (2017). https://doi.org/10.1016/j.apsusc.2016.09.080
I. Crupi, S. Boscarino, G. Torrisi, G. Scapellato, S. Mirabella, G. Piccitto, F. Simone, and A. Terrasi, “Laser irradiation of ZnO:Al/Ag/ZnO:Al multilayers for electrical isolation in thin film photovoltaics,” Nanoscale Res. Lett. 8, 392 (2013). https://doi.org/10.1186/1556-276X-8-392
M.G. Jeffrey, and W.Sh. David, “Deposition of indium tin oxide by atmospheric pressure chemical vapour deposition,” Thin Solid Films, 520, 4110 (2012). http://dx.doi.org/10.1016/j.tsf .2011.04.191
L.P. Amosova, and M.V. Isaev, “Deposition of transparent indium tin oxide electrodes by magnetron sputtering of a metallic target on a cold substrate,” Tech. Phys. 59, 1545 (2014). https://doi.org/10.1134/S1063784214100053
P.N. Krylov, R.M. Zakirova, and V. FedotovaI, “Optical properties of ITO films obtained by high-frequency magnetron sputtering with accompanying ion treatment,” Semicond. 47, 1412 (2013). https://doi.org/10.1134/S1063782613100175
S. Ray, P.S. Gupta, and G. Singh, “Electrical and optical properties of sol-gel prepared Pd-doped SnO2 thin films: Effect of multiple layers and its use as room temperature methane gas sensor,” J. Ovonic Res. 6(1), 23 (2010).
E. Manea, E. Budianu, M. Purica, C. Podaru, A. Popescu, I. Cernica, F. Babarada, and C.C. Parvulescu, “SnO2 Thin Films Prepared by Sol Gel Method for “Honeycomb” Textured Silicon Solar Cells,” ROMJIST. 10(1), 25 (2007).
I.G. Atabaev, M.U. Hajiev, and V.A. Pak, “Growth of ITO Films by Modified Chemical Vapor Deposition Method,” Inter. J. Thin Films Sci. Techn. 5(1), 13 (2016). http://dx.doi.org/10.18576/ijtfst/050102
A. Kutlimratov, M.A. Zufarov, R.R. Kabulov, and M.U. Xajiyev, “Structial, Electrophysical, and Optical Properties of ITO Films Produced by the Modified CVD Method,” Appl. Solar Energy, 58(4), 497 (2022). https://doi.org/10.3103/S0003701X22040107
I.G. Atabaev, M.U. Hajiev, V.A. Pak, S.B. Zakirova, and Kh.N. Juraev, “Growth of transparent electrical conducting films of indium and tin oxides by chemical vapor deposition,” Appl. Sol. Energy, 52, 118–121 (2016). https://doi.org/10.3103/S0003701X16020079
T. Neubert, F. Neumann, K. Schiffmann, P. Willich, and A. Hangleiter, “Investigations on oxygen diffusion in annealing processes of non-stoichiometric amorphous indium tin oxide thin films,” Thin Solid Films, 513, 319 (2006). https://doi.org/10.1016/j.tsf.2006.02.007
R.M. Zakirova, “Development of a method for modifying the properties of ITO films by ion-beam treatment during reactive RF magnetron sputtering,” D. Sci. Thesis Udmurt State University 2013.
D.C. Paine, T. Whitson, D. Janiac, R. Beresford, C.O. Yang, and B. Lewis, “A study of low temperature crystallization of amorphous thin film indium-tin-oxide,” J. Appl. Phys. 85, 8445 (1999). https://doi.org/10.1063/1.370695
Copyright (c) 2025 A.S. Saidov, Sh.N. Usmonov, M.U. Khajiev, A. Kutlimratov, T.T. Ishniyazov, N.B. Ismatov, A.A. Ganiev, S.M. Khajieva, Kh.N. Juraev, M. Tagaev, D.Sh. Saidov, T.A. Khudaybergenov
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