Strain-Resistive Properties of (Bi0.23Sb0.75)2Te3 Films at One-Sided Cyclic Alternating Strains
Abstract
The results of a study of the deformation characteristics of polycrystalline films from the (Bi0.25Sb0.75)2Te3 solid solution at one-sided cyclic alternating mechanical stresses is presented. The films were obtained on a polyamide substrate by the method of thermal vacuum condensation of molecular beams and had a columnar porous structure with the dimensions of individual crystalline grains of 2.0-2.5 µm. The effect of static and cyclic deformations on the electrical resistance and volt-ampere characteristics of strain gauge films was studied in order to manufacture strain gauges for fatigue damage accumulation on their basis. It was shown that at room temperature such films have an abnormally high static strain sensitivity G ≈ 103 arb. units and a significant hysteresis of their resistance change was detected at small numbers of alternating deformation cycles. As a result of N = 5∙105 deformation cycles, the linear section of the volt-ampere characteristic expands from (0-5) V at N = 0 to (0‑12) V. And the temperature coefficient of resistance in the range of 293 K-Tmin changes from α = -5.6∙10-3 K-1 to α = -2.5∙10-4 K-1. The characteristic value of Tmin, at which α = 0, increases with the growth of N. The studied strain gauge films can be successfully used as a sensor of fatigue stress accumulation in the temperature range of T = 273-413 K and the value of N = 0 – 5∙105.
Downloads
References
E.A. Abdullaev, and N.Kh. Yuldashev, The effect of piezoresistance in lead and bismuth chalcogenides, Part 1, (“Fan”, Tashkent, 1989).
I.H. Kazi, P.M. Wild, and T.M. Moore, “Characterization of sputtered nichrome (80/20 wt.%) films for strain guage applications,” Thin Solid Films, 515(4), 2602-2606 (2006). https://doi.org/10.1016/j.tsf.2005.10.077
I.M. Pazukha, Z.M. Makukha, Y.M. Shabelnyk, and I.Y. Protsenko, “Tensoresistive properties of thin film systems based on Ag and Co,” Journal of Nano- and Electronic Physics, 4(3), 3020 (2012). https://jnep.sumdu.edu.ua/en/component/content/full_article/826
A.Yu. Gerasimenko, L.P. Ichkitidze, V.M. Podgaetsky, and S.V. Selishchev, “Layers with the Tensoresistive Properties and their Possible Applications in Medicine,” Materials Physics and Mechanics, 37, 153-158 (2018). http://dx.doi.org/10.18720/MPM.3722018_7
L. Elbrecht, and J. Binder, “The Mechanical Properties of Thin Polycrystalline Silicon Films as Function of Deposition and Doping Conditions,” Sensors and Materials, 11(3), 163-179 (1999). https://sensors.myu-group.co.jp/sm_pdf/SM363.pdf
O.O. Mamatkarimov, S.Z. Zaynabidinov, A. Abduraimov, R.Kh. Khamidov, and U.A. Tuychiev, “Dynamic strain gauge characteristics of Schottky barrier diodes under pulsed hydrostatic pressure,” Semiconductors, 34(1), 67 (2000). https://doi.org/10.1134/1.1187960
E.A. Abdullaev, and N.Kh. Yuldashev, Effect of piezoresistance in lead and bismuth chalcogenides, Part 2, (Technika, Fergana, 2008). (in Russian)
H.M. Sulaymonov, “Effect of cyclic deformation on the electrical conductivity of p-(Bi0.3Sb0.7)2Te3 films on alternating current,” Journal of Technical Physics, 87(3), 471-472 (2017). (in Russian)
S.Sh. Abdullaev, N.Kh. Yuldashev, Kh.M. Sulaymonov, “Tensoresistive Properties of Thin Polycrystalline (Bi0.3Sb0.7)2Te3 Films at Static and Cyclic Deformations,” International Journal of Modern Physics and Application, 3(4), 52-56 (2016).
H.M. Sulaymonov, M.G. Umarov, and N.Kh. Yuldashev, “Tenzochuvstvitelnost polikristallicheskix poristix plenok”. Aktualniye problemi sovremennoy nauki-Rossiya, (4), 149-151 (2015). (in Russian)
H.M. Sulaymonov, and N.K. Yuldashev, “Effect of internal stresses on the static strain characteristics of p-(Bi0.3Sb0.7)2Te3 composite films,” Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 10(4), 878-882 (2016). https://doi.org/10.1134/S1027451016040364
Z. Xu, C. Huang, C. Tan, M. Wan, Y. Zhao, J. Ye, and W. Zeng, “Influence of microstructure on cyclic deformation response and micromechanics of Ti–55531 alloy,” Materials Science and Engineering: A, 803, 140505 (2021). https://doi.org/10.1016/j.msea.2020.140505
C. He, Y. Wu, L. Peng, N. Su, X. Li, K. Yang, Y. Liu, et al., “Cyclic Deformation and Correspondent Crack Initiation at Low-Stress Amplitudes in Mg–Gd–Y–Zr Alloy,” Materials, 11(12), 2429 (2018). https://doi:10.3390/ma11122429
P. Wang, T. Takagi, T. Takeno, and H. Miki, “Early fatigue damage detecting sensors. A review and prospects,” Sensors and Actuators A: Physical. 198, 46-60 (2013). https://doi.org/10.1016/j.sna.2013.03.025
A.A. Koryakin, E.D. Leshchenko, and V.G. Dubrovsky, “Effect of elastic stresses on the formation of axial heterojunctions in three-component AIIIBV nanowires,” Physics of the Solid State, 61, 2437-2441 (2019). (in Russian)
I.P. Buryk, S.I. Vorobyov, and L.V. Odnodvorets, “Strain resistive properties of film materials based on Ni and Mo or Cr,” PSE, 7(1,2), 115 (2009). http://dspace.nbuv.gov.ua/handle/123456789/7962 (in Russian)
N.K. Yuldashev, D.T. Mamadieva, O.R. Nurmatov, T.I. Raxmonov, and X.M. Sulaymonov, “The effect of mechanical deformation on the photovoltaic properties of semiconductor polycrystalline film structures CdTe: Sn,” Scientific-technical journal, 23(3), 9-14 (2019).
Kh.M. Sulaymonov, and N.Kh. Yuldashev, “The deformation properties of films under the influence of unilateral cyclic sign-variable pressure,” in: The Third European Conference on Physics and Mathematics, 12th September, (Vienna, Austria, 2015). pp. 1926.
T.I. Rakhmonov, “Photosensitivity Spectra of Thin Films from a CdSexS1-x Solid Solution,” Journal of Applied Mathematics and Physics, 10(12), 3676-3683 (2022). https://doi.org/10.4236/jamp.2022.1012245
T.I. Rakhmonov, D.T. Mamadiyeva, and N.Kh. Yuldashev, “Photoelectric phenomena in thin Polycrystalline CdTe, CdSe, CdS films under mechanical deformation,” European Science Review, (11-12), 40-49 (2021). https://doi.org/10.29013/ESR-21-11.12-40-49
O. Nurmatov, T. Rahmonov, Kh. Sulaymonov, and N. Yuldashev, “Phototenzoelectric properties of polycrystalline films of chalcogenides of cadmium and zinc, produced by portional evaporation in vacuum,” Euroasian Journal of Semiconductors Science and Engineering, 2(5), 40-45 (2020). https://uzjournals.edu.uz/semiconductors/vol2/iss5/10/
Copyright (c) 2025 Rustamjon U. Siddikov, Khusanboy M. Sulaymonov, Nosirjon Kh. Yuldashev
This work is licensed under a Creative Commons Attribution 4.0 International License.
Authors who publish with this journal agree to the following terms:
- Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgment of the work's authorship and initial publication in this journal.
- Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgment of its initial publication in this journal.
- Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).
