Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions
Abstract
This study investigated the impact of linear graded doping concentrations on the electrophysical properties of p-n junctions based on Si and GaAs. Doping gradients ranged from 1∙10¹⁶ to 1∙10²⁰ cm⁻4, and the analysis was performed at temperatures between 200 K and 500 K, in 100 K increments. The Poisson equation was solved for linear doping profiles, with analytical solutions derived for both Si and GaAs materials. These solutions provided detailed insights into the electric field, potential distributions, built-in potential, and the width of the depletion region. For both materials, the built-in potential was temperature-dependent, with Si exhibiting a more significant variation due to its higher intrinsic carrier concentration. The depletion region width was influenced by both doping concentration and temperature, with GaAs showing a more pronounced variation in width, owing to its distinct material properties compared to Si. The results highlight the crucial role of doping gradients and temperature variations in shaping the performance of the linear graded p-n junctions, offering valuable implications for the design of semiconductor devices such as diodes and transistors optimized for different temperature conditions.
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