Comparative Study and Analytical Modeling of AlGaN/GaN HEMT and MOSHEMT Based Biosensors for Biomolecules Detection

  • Abdellah Bouguenna Electrical Engineering Laboratory of Oran, Electronics Department, Electrical Engineering Faculty, Sciences & Technology University of Oran (MB-USTO), Oran, Algeria https://orcid.org/0000-0003-3492-5418
  • Abdelhadi Feddag Department of Electronics. Faculty of Electrical Engineering University of Sciences and Technology of Oran, Microsystems and Embedded Systems Laboratory of Oran, Algeria https://orcid.org/0009-0004-3817-0539
  • Driss Bouguenna Geomatics, Ecology and Environment Laboratory, Nature and Life Science Faculty, Mustapha Stambouli University of Mascara, Mascara, Algeria; Common Core Science and Technology Department, Sciences and Technology Faculty, Mustapha Stambouli University of Mascara, Mascara, Algeria https://orcid.org/0000-0002-0660-9576
  • Ibrahim Farouk Bouguenna Electrical Engineering Department, Sciences and Technology Faculty, Mustapha Stambouli University of Mascara, Mascara, Algeria https://orcid.org/0000-0001-8631-8172
DOI: https://doi.org/10.26565/2312-4334-2025-1-33
Keywords: AlGaN/GaN, HEMT, MOSHEMT, Biosensors, Biomolecules

Abstract

In this study, a model has been developed to analyze AlGaN/GaN high-electron-transistor (HEMT) and metal-oxide semiconductor high-electron-transistor (MOSHEMT) based biosensors. The model focuses on detecting biomolecules such as ChOx, protein, streptavidin and uricase by modulating the dielectric constant. The sensitivity parameters used for biomolecule detection include drain current, transconductance, and drain off sensitivity. The dielectric constant is adjusted based on the specific biomolecule being sensed by the biosensor. The variation in dielectric leads to changes in drain current, with an increase or decrease depending on the positive charge of the biomolecules. The HEMT device exhibits greater variations in drain current, transconductance, and drain off sensitivity compared to the MOSHEMT device when the biomolecule is present in the cavity region. The simulation results are validated by comparing them with Atlas-TCAD (atlas-technology computer aided design) and experimental data, showing excellent agreement.

Downloads

References

H.M. Shaveta, A. Maali, and C. Rishu, “Rapid detection of biomolecules in a dielectric modulated GaN MOSHEMT,” J. Mater. Sci: Mater Electron, 31, 16609–16615 (2020). https://doi.org/10.1007/s10854-020-04216-7

S. Verma, S.A. Loan, and A.G. Alharbi, “Polarization engineered enhancement Mode GaN HEMT: Design and Investigation,” Superlattices Microstruct. 119, 181–193 (2018). https://doi.org/10.1016/j.spmi.2018.04.041

S.A. Loan, S. Verma, and A.R.M. Alamoud, “High performance charge plasma based normally-Off GaN MOSFET,” IET Electron. Lett. 52(8), 656–658 (2016). https://doi.org/10.1049/el.2015.4517

Z. Gu, J. Wang, B. Miao, L. Zhao, X. Liu, D. Wu, and J. Li, “Highly sensitive AlGaN/GaN HEMT biosensors using an ethanolamine modification strategy for bioassay applications,” RSC Advance, 9, 15341–15349 (2019). https://doi.org/10.1039/C9RA02055A

S.N. Mishra, R. Saha, and K. Jena, “Normally-Off AlGaN/GaN MOSHEMT as lebel free biosensor,” ECS J. Solid State Sci. Technol. 9, 1–15 (2020). https://doi.org/10.1149/2162- 8777/aba1cd

S.J. Pearton, B.S. Kang, Kim S. Kim, F. Ren, B.P. Gila, C.R. Abernathy, et al., “GaN-based diodes and transistors for chemical, gas, biological and pressure sensing,” J. Phys: Condens. Matter, 16, R961–R994 (2004). https://doi.org/10.1088/0953-8984/16/29/R02/meta

A. Varghese, C. Periasamy, and L. Bhargava, “Fabrication and charge deduction-based sensitivity analysis of GaN MOS-HEMT device for glucose, MIG, C-erbB-2, KIM-1 and PSA detection,” IEEE Trans. Nanotechnol. 18, 747–755 (2019). https://doi.org/10.1109/TNANO.2019.2928308

A. Koudymov, H. Fatima, G. Simin, J. Yang, M.A. Khan, A. Tarakji, X. Hu, et al., “Maximum current in nitride-based heterostructure Field-Effect Transistors,” Appl. Phys. Lett, 80, 3216–3218 (2002). https://doi.org//10.1063/1.1476054

M.A. Khan, X. Hu, G. Sumin, A. Lunev, J. Yang, R. Gaska, and M.S. Shur, “AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field Effect Transistor,” IEEE Elec. Dev. Letters, 21, 63–65 (2000). https://doi.org//10.1109/55.821668

C.C. Huang, G.Y. Lee, J.I. Chyi, H.T Cheng, C.P Hsu, Y.R Hsu, C.H. Hsu, et al., “AlGaN/GaN high electron mobility transistors for protein–peptide binding affinity study,” Biosens. Bioelectron. 41, 717–722 (2012). https://doi.org/10.1016/j.bios.2012.09.066

J. Cheng, J. Li, B. Miao, J. Wang, Z. Wu, D. Wu, and R. Pei, “Ultrasensitive detection of Hg2+ using oligo nucleotide functionalized AlGaN/GaN High Electron Mobility Transistor,” Appl. Phys. Lett, 105, 083121-1–083121-4 (2014). https://doi.org//abs/10.1063/1.4894277

S.U. Schwarz, S. Linkohr, P. Lorenz, S. Krischok, T. Nakamura, V. Cimalla, C.E. Nebel, and O. Ambacher, “DNA-sensor based on AlGaN/GaN High Electron Mobility Transistor,” Phys. Status Solidi A, 208, 1626–1629 (2011). https://doi.org/10.1002/pssa.201001041

B.S. Kang, H.T. Wang, T.P. Lele, Y. Tseng, F. Ren, S.J. Pearton, J.W. Johnson, et al., “Prostate specific antigen detection using high electron mobility transistors,” Appl. Phys. Lett. 91, 112106 (2007). https://doi.org/10.1063/1.2772192

K.H. Chen, B.S. Kang, H.T. Wang, T.P. Lele, F. Ren, Y.L. Wang, C.Y. Chang, et al., “C-erbB-2 sensing using AlGaN/GaN High Electron Mobility Transistors for breast cancer detection,” Appl. Phys. Lett. 92, 192103-1–192103-3 (2008), https://doi.org/abs/10.1063/1.2926656

A. Bouguenna, D. Bouguenna, A.B. Stambouli, and S.A. Loan, “Comparative Study and Modeling of AlGaN/GaN Heterostructure HEMT and MOSHEMT Biosensors,” Ijneam, 16(3), 511–522 (2023). https://doi.org/10.58915/ijneam.v16i3.1268

K. Jena, R. Swain, and T.R. Lenka, “Effect of thin gate dielectrics on dc, radio frequency and linearity characteristics of lattice-matched AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistor,” IET Circuits Devices Syst. 10, 423 432 (2016). https://doi.org/10.1049/iet-cds.2015.0332

S. Baskaran, A. Mohanbabu, N. Anbuselvan, N. Mohankumar, D. Godwinraj, and C.K. Sarkar, “Modeling of 2DEG sheet carrier density and DC characteristics in spacer based AlGaN/AlN/GaN HEMT devices,” Superlattices Microstruct. 64, 470–482 (2013). http://dx.doi.org/10.1016/j.spmi.2013.10.019

P. Dwivedi, and A. Kranti, “Applicability of transconductance-to-current ratio (gm/Ids) as a sensing metric for tunnel FET biosensors,” IEEE Sensors J. 17, 1030–1036 (2017). https://doi.org/10.1109/JSEN.2016.2640192

A. Varghese, C. Periasamy, and L. Bhargava, “Analytical modeling and simulation-based investigation of AlGaN/AlN/GaN bio-HEMT sensor for C-erbB-2 detection,” IEEE Sens. J. 18, 9595–9602 (2018). https://doi.org/10.1109/JSEN.2018.2871718

Y.F. Wu, S. Keller, P. Kozodoy, B.P. Keller, P. Parikh, D. Kapolnek, S.P. Denbaars, and U.K. Mishra, “Bias dependent microwave performance of AlGaN/GaN MODFET’s up to 100 V,” IEEE Electron. Dev. Lett. 18, 290–292 (1997). https://doi.org/10.1109/55.585362

W.D. Hu, X.S. Chen, Z.J. Quan, X.M. Zhang, Y. Huang, C.S. Xia, W. Lu, and P.D. Ye, “Simulation and optimization of GaN-based metal-oxide-semiconductor high electromobility-transistor using field-dependent drift velocity model,” J. Appl. Phys. 102, 034502 (2007). http://dx.doi.org/10.1063/1.2764206

O. Ambacher, J. Smart, J.R. Shealy, N.G. Weimann, K. Chu, M. Murphy, W.J. Schaff, et al., “Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures,” J. Appl. Phys. 85, 3222–3233 (1999). https://doi.org/10.1063/1.369664

A.M. Bhat, A. Varghese, N. Shafi, and C. Periasamy, “A Dielectrically modulated GaN/AlN/AlGaN MOSHEMT with a nanogap embedded cavity for biosensing applications,” IETE J. Res. 69(3), 1419-1428 (2023). https://doi.org/10.1080/03772063.2020.1869593

Y. Liu, X. He, Y. Dong, S. Fu, Y. Liu, and D. Chen, “The sensing mechanism of InAlN/GaN HEMT,” Cryst. 12, 401 (2022). https://doi.org/10.3390/cryst12030401

Published
2025-03-03
Cited
How to Cite
Bouguenna, A., Feddag, A., Bouguenna, D., & Bouguenna, I. F. (2025). Comparative Study and Analytical Modeling of AlGaN/GaN HEMT and MOSHEMT Based Biosensors for Biomolecules Detection. East European Journal of Physics, (1), 284-289. https://doi.org/10.26565/2312-4334-2025-1-33
Issue
No. 1 (2025): East European Journal of Physics
Section
Original Papers

Copyright (c) 2025 Abdellah Bouguenna, Abdelhadi Feddag, Driss Bouguenna, Ibrahim Farouk Bouguenna

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

Authors who publish with this journal agree to the following terms:

    • Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgment of the work's authorship and initial publication in this journal.
    • Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgment of its initial publication in this journal.
    • Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).