Doping of Silicon with Gadolinium Atoms – Structural Distribution and Raman Spectral Changes
Abstract
In this study, we investigated silicon samples doped with gadolinium using two different methods: incorporation during growth and diffusion treatment at elevated temperatures. Scanning electron microscopy (SEM) and energy-dispersive spectroscopy (EDS) were used to analyze the surface microstructure and impurity atom distribution, while Raman spectroscopy revealed characteristic phonon mode shifts induced by gadolinium doping. It was found that doping during growth results in a more uniform structure with fewer large defects, although localized regions enriched in carbon and oxygen remain. In contrast, diffusion doping leads to the formation of pronounced inhomogeneities, indicating significant dislocation formation and structural defects due to lattice parameter mismatches. The results demonstrate the influence of the doping method on the silicon surface state, elastic stress distribution, and the emergence of new vibrational modes, which can be utilized for the targeted modification of material properties in spintronic, optoelectronic, and sensor devices.
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