Optical Investigation of ZnS/GaAs and CuGaS2/GaP Systems

  • Kh.N. Ahmadova Institute of Physics, Ministry of Science and Education of the Republic of Azerbaijan, Baku, Azerbaijan; Azerbaijan State Oil and Industry University, Baku, Azerbaijan; Khazar University, Baku, Azerbaijan https://orcid.org/0000-0001-5974-5400
  • M.A. Musayev Azerbaijan State Oil and Industry University, Baku, Azerbaijan
  • N.N. Hashimova Azerbaijan State Oil and Industry University, Baku, Azerbaijan
DOI: https://doi.org/10.26565/2312-4334-2025-1-20
Keywords: Lattice mismatch, Thin film, Ellipsometry

Abstract

ZnS and CuGaS2 are materials with a wide range of applications in modern optoelectronics. These materials are used for IR windows as well as lenses in the thermal band, where multispectral maximum transmission and lowest absorption are required. Precisely because of these characteristics, extensive and accurate optical research is necessary. This work has developed an ellipsometric approach for ZnS/GaAs and CuGaS2/GaP film/substrate systems to address direct ellipsometry tasks. The proposed approach enables us to determine the effects of lattice mismatch on the optical indicatrix of the stressed film being considered through ellipsometric parameters.

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Published
2025-03-03
Cited
How to Cite
Ahmadova, K., Musayev, M., & Hashimova, N. (2025). Optical Investigation of ZnS/GaAs and CuGaS2/GaP Systems. East European Journal of Physics, (1), 197-203. https://doi.org/10.26565/2312-4334-2025-1-20
Issue
No. 1 (2025): East European Journal of Physics
Section
Original Papers

Copyright (c) 2025 Kh.N. Ahmadova, M.A. Musayev, N.N. Hashimova

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