Preparation of N-Si-P-GaSe Heterojunctions Based on an Amorphous GaSe Layer Without Impurities and Study of Their Electrical Properties
Abstract
The electrical and photoelectric properties of anisotype n-Si−p-GaSe heterojunctions obtained as a result of the deposition of a GaSe thin layer on a cold n-Si single crystal substrate by the thermal evaporation method were studied. It was determined that the height of the potential barrier in thermal annealing structures at T = 200 °C during t = 3 hours occurs due to the decrease in the density of states of local levels located near the Fermi level in the amorphous layer. The mechanism of photosensitivity in an isotype heterostructures was analyzed and it was found that the photosensitivity of the heterojunction increases as a result of a decrease in the surface density of state at the contact boundary of the components, by thermal means. The spectral distribution of the quantum efficiency in the n‑Si – p‑GaSe heterojunction was studied and their perspective was determined.
Downloads
References
S.H. Jabarov, N.A. Ismayilova, D.P. Kozlenko, T.G. Mammadov, N.T. Mamedov, H.S. Orudzhev, S.E. Kichanov, et al., “Structural and elastic properties of TlInSe2 at high pressure,” Solid State Sciences, 111, 106343 (2021). https://doi.org/10.1016/j.solidstatesciences.2020.106343
Y.I. Aliyev, Y.G. Asadov, T.M. Ilyasli, F.M. Mammadov, T.G. Naghiyev, Z.A. Ismayilova, M.N. Mirzayev, and S.H. Jabarov, “Structural aspects of thermal properties of AgCuS compound,” Modern Physics Letters B, 34(05), 2050066 (2020). https://doi.org/10.1142/S0217984920500669
A.S. Alekperov, S.H. Jabarov, M.N. Mirzayev, E.B. Asgerov, N.A. Ismayilova, Y.I. Aliyev, T.T. Thabethe, and N.T. Dang, “Effect of gamma irradiation on the microstructure of the layered Ge0.995Nd0.005S,” Modern Physics Letters B, 33(09), 1950104 (2019). https://doi.org/10.1142/S0217984919501045
N.N. Mursakulov, N.N. Abdulzade, S.H. Jabarov, and Ch.E. Sabzalieva, “Investıgatıon of CuIn1-xGaxSe2 thin films for solar cells obtaıned by the magnetron sputterıng method from two magnetrons shıfted to each other,” New Materials, Compounds and Applications, 6(2), 140-147 (2022). http://jomardpublishing.com/UploadFiles/Files/journals/NMCA/v6n2/Mursakulov_et_al.pdf
S.H. Jabarov, “First principles study of structural phase transition in Ag2S under high pressure,” Integrated Ferroelectrics, 230, 23-28 (2022). https://doi.org/10.1080/10584587.2022.2102794
Y.I. Alıyev, F.G. Asadov, T.M. Ilyaslı, A.O. Dashdemirov, R.E. Huseynov, and S.H. Jabarov, “Vibrational properties of YbAs2S4 and YbAs2Se4 compounds: by infrared spectroscopy,” Ferroelectrics, 599, 78-82 (2022). https://doi.org/10.1080/00150193.2022.2113641
B.G. Tagiyev, O.B. Tagiyev, A.I. Mammadov, V.X. Quang, T.G. Naghiyev, S.H. Jabarov, M.S. Leonenya, et al., “Structural and luminescence properties of CaxBa1-xGa2S4: Eu2+ chalcogenide semiconductor solid solutions,” Physica B: Condensed Matter, 478, 58-62 (2015). https://doi.org/10.1016/j.physb.2015.08.061
Sh.B. Utamuradova, Sh.Kh. Daliev, D.A. Rakhmanov, A.S. Doroshkevich, V.A. Kinev, O.Yu. Ponomareva, M.N. Mirzayev, et al., “IR – spectroscopy of n-Si ırradıated wıth protons,” Advanced Physical Research, 5(2), 73-80 (2023). http://jomardpublishing.com/UploadFiles/Files/journals/APR/V5N2/Utamuradova_et_al.pdf
A.S. Alekperov, A.O. Dashdemirov, N.A. Ismayilova, and S.H. Jabarov, “Fabrication of a Ge–GeS: Nd heterojunction and investigation of the spectral characteristics, Semiconductors,” 54, 1406-1409 (2020). https://doi.org/10.1134/S1063782620110044
Sh.B. Utamuradova, D.A. Rakhmanov, A.S. Doroshkevich, I.G. Genov, Z. Slavkova, and M.N. Ilyina, “Impedance spectroscopy of p Si, p-Si ırradıated wıth protons,” Advanced Physical Research, 5(1), 5-11 (2023). http://jomardpublishing.com/UploadFiles/Files/journals/APR/V5N1/Utamuradova_et_al.pdf
G.A. Akhundov, N.A. Gasanova, and M.A. Nazametdinova, “Optical absorption, reflection and dispersion of GaS and GaSe layer crystals,” Physica Status Solidi b, 15, k109- k102 (1966). https://doi.org/10.1002/PSSB.19660150249
A.G. Kazım-zade, A. Mokhtari, I. Hympanova, V.M. Salmanov, Yu. Asadov, and A.A. Agaeva, “Influence of stacking disorder on the optical properties of layered crystals GaSe,” Acta Physica Universitatis Comenianae, XLVI-XLVII, 101-108 (2005-2006). https://dai.fmph.uniba.sk/~lucan/apuc/_vol46-47/Apuc12.pdf
P.A. Hu, Z.Z. Wen, L.F. Wang, P.H. Tan, and K. Xiao, “Synthesis of few-layer GaSe nanosheets for high performance photodetectors,” ACS Nano, 6, 5988–5994 (2012). https://doi.org/10.1021/nn300889c
T. Kushida, F. Minami, Y. Oka, Y. Nakazaki, and Y. Tanaka, “Edge emission in GaSe and GaS,” Nuovo Cimento B, 39, 650 654 (1977). https://doi.org/10.1007/BF02725806
A.G. Kyazym-zade, M. Karabulur, A.Kh. Dincher, V.M. Salmanov, M.A. Dzhafarov, A.M. Guseinov, and R.M. Mamedov, “Structure, optical, and luminescent properties of GaSe nanoparticles,” Nanotechnologies in Russia, 10, 794-801 (2015).
Yu.A. Nikolaev, V.Yu. Rud’, Yu.V. Rud’, and E.I. Terukov, “Photoelectric phenomena in a-Si:H/p-CuInSe2 heterostructures,” Semiconductors, 34, 658-661 (2000). https://doi.org/10.1134/1.1188049
V.N. Brudnyi, S.Yu. Sarkisov, and A.V. Kosobutsky, “On the charge neutrality level and the electronic properties of interphase boundaries in the layered ε-GaSe semiconductor,” Semiconductors, 49, 1307-1310 (2015). https://doi.org/10.1134/S1063782615100061
S.E. Aleksandrov, T.A. Gavrikova, and V.A. Zykov, “Photoelectric properties of isotype and anisotype Si/GaN:O heterojunctions,” Semiconductors, 34, 1295-1300 (2000). https://doi.org/10.1134/1.1325426
L.S. Berman, Capacitive methods for the study of semiconductors, (Nauka, Leninqrad, 1972). (in Russian)
J Martínez-Pastor, A. Segura, J.L. Valdes, and A. Chevy, “Electrical and photovoltaic properties of indium - tin - oxide/p - InSe/Au solar cells,” Journal of Applied Physics, 62(4), 1477-1483 (1987). https://doi.org/10.1063/1.339627
A. Milns, and D. Feucht, Heterojunctions and metal-semiconductor transitions, (Mir, Moscow, 1975). (in Russian)
R.R. Daniels, G. Margaritondo, C. Quaresima, P. Perfetti, and F. Levy, “Summary Abstract: GaSe - Ge and GaSe - Si: two possible examples of schottky‐like behavior of heterojunction interfaces,” Journal of Vacuum Science Technology A, 3(3), 979 980 (1985). https://doi.org/10.1116/1.573369
N.V. Vishnyakov, S.P. Vikhrov, V.G. Mishustin, A.P. Avachev, I.G. Utochkin, and A.A. Popov, “Formation of potential barriers in undoped disordered semiconductors,” Semiconductors, 39, 1147-1152 (2005). https://doi.org/10.1134/1.2085261
Copyright (c) 2024 Rahim Salim Madatov, A.S. Alekperov, F.N. Nurmammadova, Narmin A. Ismayilova, Sakin H. Jabarov
This work is licensed under a Creative Commons Attribution 4.0 International License.
Authors who publish with this journal agree to the following terms:
- Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgment of the work's authorship and initial publication in this journal.
- Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgment of its initial publication in this journal.
- Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).
