Preparation of N-Si-P-GaSe Heterojunctions Based on an Amorphous GaSe Layer Without Impurities and Study of Their Electrical Properties

  • Rahim Salim Madatov Institute of Radiation Problems, Ministry of Science and Education Republic of Azerbaijan, Baku, Azerbaijan
  • A.S. Alekperov Azerbaijan State Pedagogical University, Baku, Azerbaijan
  • F.N. Nurmammadova Baku Engineering University, Khirdalan, Azerbaijan
  • Narmin A. Ismayilova Institute of Physics, Ministry of Science and Education Republic of Azerbaijan, Baku, Azerbaijan; Western Caspian University, Baku, Azerbaijan
  • Sakin H. Jabarov Institute of Radiation Problems, Ministry of Science and Education Republic of Azerbaijan, Baku, Azerbaijan
Keywords: GaSe, Thin film, Heterojunction, Electrophysical properties


The electrical and photoelectric properties of anisotype n-Si−p-GaSe heterojunctions obtained as a result of the deposition of a GaSe thin layer on a cold n-Si single crystal substrate by the thermal evaporation method were studied. It was determined that the height of the potential barrier in thermal annealing structures at T = 200 °C during t = 3 hours occurs due to the decrease in the density of states of local levels located near the Fermi level in the amorphous layer. The mechanism of photosensitivity in an isotype heterostructures was analyzed and it was found that the photosensitivity of the heterojunction increases as a result of a decrease in the surface density of state at the contact boundary of the components, by thermal means. The spectral distribution of the quantum efficiency in the n‑Si – p‑GaSe heterojunction was studied and their perspective was determined.


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How to Cite
Madatov, R. S., Alekperov, A., Nurmammadova, F., Ismayilova, N. A., & Jabarov, S. H. (2024). Preparation of N-Si-P-GaSe Heterojunctions Based on an Amorphous GaSe Layer Without Impurities and Study of Their Electrical Properties. East European Journal of Physics, (1), 322-326.