Enhancing the Perfection of a Silicon Crystal Doped with Nickel and Zinc Impurities
Abstract
This research paper presents the findings of an investigation into the interaction between zinc (Zn) and nickel (Ni) impurity atoms within a silicon (Si) matrix, which were doped sequentially in various combinations. The characterization techniques employed for this study encompass X-ray diffraction and IR-Fourier spectrometry. It is noteworthy that the degree of crystallinity exhibited by the silicon lattice, subject to the introduction of Zn and Ni impurities, is contingent upon the methodology employed for impurity incorporation. The results of this study reveal a distinctive trend in the optical properties of these doped silicon samples. Specifically, upon the introduction of Zn atoms into silicon that was pre-doped with Ni (Si<Ni, Zn>), there is a concomitant reduction in the concentration of optically active oxygen atoms. Remarkably, this alteration in the dopant composition leads to a marked enhancement in the transparency of the silicon crystal. In stark contrast, when the doping sequence is reversed (Si<Ni, Zn> Ni>), an opposing effect is observed, resulting in a diminishment of crystal transparency. These findings underscore the intricate interplay between the introduced impurity atoms, the dopant sequence, and their collective impact on the optical properties of the silicon matrix. Such insights contribute to our comprehension of the nuanced behavior of doped silicon and have implications for applications requiring tailored optical characteristics in semiconductor materials.
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