Modeling and Theoretical Study of p-n Heterojunctions Based on CdTe/Si: Band Alignment, Carrier Transport, and Temperature-Dependent Electrophysical Properties
DOI:
https://doi.org/10.26565/2312-4334-2025-1-22Keywords:
Modeling, Built-in potential, Heterojunction, Band gap, Intrinsic concentration, Intrinsic electrical conductivityAbstract
This paper presents a comprehensive theoretical study of p-n heterojunctions formed between cadmium telluride (CdTe) and silicon (Si) over the temperature range of 0 K to 800 K. We focus on band alignment, carrier transport mechanisms, and the temperature-dependent electrophysical properties of the heterojunctions. Through modeling approaches, we explore the energy band structure, intrinsic concentration, intrinsic electrical conductivity, and the impact of temperature variations on the heterojunction characteristics. Our findings provide insights into optimizing the performance of CdTe/Si heterojunctions for applications in photovoltaics and optoelectronics.
References
R.A. Ismail, K.I. Hassan, et al., Mat. Sci. Sem. Processing, 10, 1 (2007). https://doi.org/10.1016/j.mssp.2006.12.001
M.H. Ehsan, H.R. Dizaji, and M.H. Mirhaj, Digest Journal of Nanomaterials and Biostructures, 7, 629 (2012).
W.A. Pinheiro, V.D. Falcão, L.R. de Oliveira Cruz, and C.L. Ferreira, Materials Research, 91, 47 (2006). https://doi.org/10.1590/S1516-14392006000100010
J.Sh. Abdullayev, and I.B. Sapaev, Eur. J. Phys. 3(49), 21 (2024). https://doi.org/10.31489/2024No3/21-28
J.Sh. Abdullayev, and I.B. Sapaev, East Eur. J. Phys. (3, (2024). https://doi.org/10.26565/2312-4334-2024-3-39
A. Cao, T. Tan, et. al., 545, 323 (2018). https://doi.org/10.1016/j.physb.2018.06.035
T.L. Chu, S.S. Chu, and S.T. Ang, J. Appl. Phys. 64, 1233 (1988). https://doi.org/10.1063/1.341840
Sh.B. Utamuratova, et. al., East Eur. J. Phys. (3), 385 (2023). https://doi.org/10.26565/2312-4334-2023-3-41
V.I. Chepurnov, et. al., Computational Nanotechnology, 8(3), 59 (2021). https://doi.org/10.33693/2313-223X-2021-8-3-59-68
F. Bouzid, E. Kayahan, M.A. Saeed, et al., Applied Physics A, 130, 222 (2024). https://doi.org/10.1007/s00339-024-07377-y
C.H. Su, J. Appl. Phys. 103, 084903 (2008), https://doi.org/10.1063/1.2899087
M.N. Harif, et. al., Crystals, 13(5), 848 (2023). https://doi.org/10.3390/cryst13050848
S.H. Zyoud, et. al., Crystals, 11, 1454 (2021). https://doi.org/10.20944/preprints202110.0346.v1
Mathematics for Semiconductor Heterostructures, Modeling, Analysis, and Numerics, International Workshop, (2012). www.wias-berlin.de/workshops/msh2012
E.A.B. Cole, Mathematical and Numerical Modelling of Heterostructure Semiconductor Devices: From Theory to Programming, (Springer-Verlag, London, 2009). https://doi.org/10.1007/978-1-84882-937-4
M.V. Dolgopolov, et al., Samara U., Nat. Sci. Series, 30, 64 (2024). http://dx.doi.org/10.18287/2541-7525-2024-30-1-64-81 (in Russian)
J. Chavez, X. Zhou, S. Almeida, R. Aguirre, et al., J. Mat. Sci. Research, 5(3), 1(2016). https://doi.org/10.5539/jmsr.v5n3p1
B.S. Chaudhari, M. Niraula, et. al., J. Electronic Materials, 52, 3431–3435 (2023). https://doi.org/10.1007/s11664-023-10318-9
M.A. Razooqia, et. al., Ad. Mat. Research, 702, 236 (2013). https://doi.org/10.4028/www.scientific.net/AMR.702.236
X. Li, J. Lu, et. al., Nuclear Science and Techniques, 31, 18 (2020). https://doi.org/10.1007/s41365-020-0723-y
S.R. Bera, and S. Saha, Appl. Nanosci. 6, 1037 (2016). https://doi.org/10.1007/s13204-015-0516-5
E. Napchan, “HETEROJUNCTIONS OF CdTe ON Si”, Imperial College of Science and Technology, (1987)
D.J. Smith, et al., Materials Science and Engineering B, 77, 93 (2000). https://doi.org/10.1016/S0921-5107(00)00480-3
W.F. Mohammad, Circuits and Systems, 3, (2012). http://doi.org/10.4236/cs.2012.31007
V. Mizeikis, K. Jarašiunas, et. al., J. Crystal Growth, 214/215, (2000). http://doi.org/10.1016/s0022-0248(00)00075-0
M.C. Putnam, et al., Energy & Environmental Science, 3(8), 1037 (2010). https://doi.org/10.1039/C0EE00014K
A.V. Sukach, V.V. Tetyorkin, and N.M. Krolevec, Semiconductor Physics, Quantum Electronics & Optoelectronics, 2, 13 (2010). http://journal-spqeo.org.ua/n2_2010/v13n2-2010-p221-225.pdf
S. Osono, Y. Uchiyama, et. al., Thin Solid Films, 430, 165 (2003). https://doi.org/10.1016/S0040-6090(03)00100-7
I.B. Sapaev, et. al., E3S Web of Conferences, 410, 02057 (2023). https://doi.org/10.1051/e3sconf/202341002057
I.B. Sapaev, et. al., E3S Web of Conferences, 413, 04009 (2023). https://doi.org/10.1051/e3sconf/202341304009
I.B. Sapaev, et. al., E3S Web of Conferences, 413, 04008 (2023). https://doi.org/10.1051/e3sconf/202341304008
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