X-Ray Structural Investigations Of n-Si Irradiated with Protons
DOI:
https://doi.org/10.26565/2312-4334-2023-2-21Keywords:
Silicon, platinum, diffusion, doping, irradiation, proton, X-ray diffractionAbstract
In this work, the effect of proton irradiation on the change in the structure of silicon samples doped with platinum was studied. The samples were irradiated with protons at a dose of 9×1014 cm-2 with an energy of 600 keV and a current of 1÷1.5 μA. To determine the change in the structure after irradiation, the methods of X-ray diffraction and atomic force microscopy were used. The obtained results indicate that doping with platinum does not lead to a modification of the cubic crystal structure of silicon, but only to minor changes in the structural characteristics and surface morphology. In this case, proton irradiation of a silicon single crystal with a dose of 9.0×1014 cm–2 with an energy of 600 keV leads to the formation of defects without the formation of an amorphous near-surface layer.
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