The temperature dependence of the band gap of Si and Ge by the model

Abstract

The model decomposition of the density of states in a series of GN(Ei, Et, T)-derivative functions of discrete states of the ionization energy The temperature dependence of the band gap of Si and Ge. Numerical results indicate that the band gap of Si and Ge in the ideal case, if the band gap energy levels available at low temperatures greater than the experimental results: Si – 0.018 eV, Ge– 0.008 еV.