Analysis of transient processes in irradiated silicon p+nn+ -structures

Abstract

Based on experimental data of the dependence of the minority carrier lifetime from radiation exposure was concluded that the relationship Kτ0/Kτ(Ф) from ρ(Ф)/ρ(0) with a high degree of confidence (R2 = 0,96) is approximated by a straight line and actually it is very close to the well-known formula for the lifetime of minority carriers at high concentration of traps τp0(1 + Nsm/n0). The dependence of the Kτ from neutron fluence probably is determined by decreasing the concentration of majority carriers under irradiation.