Determination of the Dependence of the Oscillation of Transverse Electrical Conductivity and Magnetoresistance on Temperature in Heterostructures Based on Quantum Wells

DOI: https://doi.org/10.26565/2312-4334-2023-3-10
Keywords: semiconductor, conductivity, quantum well, magnetoresistance, magnetic field

Abstract

In this work, the influence of two-dimensional state density on oscillations of transverse electrical conductivity in heterostructures with rectangular quantum wells is investigated. A new analytical expression is derived for calculating the temperature dependence of the transverse electrical conductivity oscillation and the magnetoresistance of a quantum well. For the first time, a mechanism has been developed for oscillating the transverse electrical conductivity and magnetoresistance of a quantum well from the first-order derivative of the magnetic field (differential)  at low temperatures and weak magnetic fields. The oscillations of electrical conductivity and magnetoresistance of a narrow-band quantum well with a non-parabolic dispersion law are investigated. The proposed theory investigated the results of experiments of a narrow-band quantum well (InxGa1-xSb).

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Published
2023-09-04
Cited
How to Cite
Erkaboev, U. I., & Rakhimov, R. G. (2023). Determination of the Dependence of the Oscillation of Transverse Electrical Conductivity and Magnetoresistance on Temperature in Heterostructures Based on Quantum Wells. East European Journal of Physics, (3), 133-145. https://doi.org/10.26565/2312-4334-2023-3-10
Issue
No. 3 (2023): East European Journal of Physics
Section
Original Papers

Copyright (c) 2023 U.I. Erkaboev, R.G. Rakhimov

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