The structure, morphology and electrical properties of NI1-xLIxO films, prepared by sol-gel method

doi:10.26565/2220-637X-2013-22-22

A. S. Bezkrovny SSI “Institute for Single Crystals”, National Academy of Sciences of Ukraine
N. V. Babaevskaya SSI “Institute for Single Crystals”, National Academy of Sciences of Ukraine
P. V. Mateichenko SSI “Institute for Single Crystals”, National Academy of Sciences of Ukraine
O. M. Vovk SSI “Institute for Single Crystals”, National Academy of Sciences of Ukraine
Yu. N. Savina SSI “Institute for Single Crystals”, National Academy of Sciences of Ukraine
A. K. Kapustnik SSI “Institute for Single Crystals”, National Academy of Sciences of Ukraine

DOI: https://doi.org/10.26565/2220-637X-2013-22-22

Keywords: nickel oxide film, lithium, sol-gel, electrical properties

Abstract

Nickel oxide (NiO) and Ni_1-xLi_xO thin films (thicknesses 20 – 100 nm) were prepared by sol-gel spin-coating technique on glass substrates. The effect of annealing temperature on films structure and morphology was studied. It was shown, that the temperature range of pore and crack free NiO films crystallization is 250 – 500 °C. The effect of Li concentration in Ni_1-xLi_xO system on the films structure, morphology and electrical resistance was studied. Defects-free Ni_1-xLi_xO films were formed at Li concentration up to 40 at. %. The electrical measurements showed that the resistance of the films decreased with the increase of Li concentration level up to 40 at. % and the increase the film thickness from 20 nm to 100 nm. The minimum of the electrical resistance (10⁴ Ω∙cm) took place in Ni_0.60Li_0.40O films with the thickness 100 nm.

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References

J.M. Caruge, J.E. Halpert, V. Wood, V. Bulović, M.G. Bawendi, Nature Photonics, 2 (2008) 247.

V. Wood, M. J. Panzer, J.E. Halpert, J.M. Caruge, M.G. Bawendi, V. Bulović, Am. Chem. Soc., 3 (2009) 3581.

K.X. Steirer, J. P. Chesin, N.E. Widjonarko, J.J. Berry, A. Miedaner, D.S. Ginley, D.C. Olson, Organic Electronics, 11 (2010) 1414.

B. Ling, X.W. Sun, J.L. Zhao, Ch. Ke, S.T. Tan, R. Chen, H.D. Sun, Zh. L. Dong, J. Phys. Chem. C, 114 (2010) 18390.

J. Zhai, D. Wang, L. Peng, Y. Lin, X. Li , T. Xie, Sensors and Actuators B, 147 (2010) 234.

M.A. Flores-Mendoza, R. Castanedo-Perez, G. Torres-Delgado, J. Márquez Marín, O. Zelaya-Angel, Thin Solid Films, 517 (2008) 681.

F. Xu, M. Dai, Y. Lu, L. Sun, J. Phys. Chem. C, 114 (2010) 2776.

M. Izerrouken, S. Kermadi, N. Souami, A. Sari, M. Boumaour, Nuclear Instruments and Methods in Physics Research A, 611 (2009) 14.

H. Sato, T. Minami, S. Takata, T. Yamada, Thin Solid Films, 236 (1993) 27.

[10] A.A. Al-Ghamdi, W. E. Mahmoud, S.J. Yaghmour, F.M. Al-Marzouki, J. Alloys and Comp., 486 (2009) 9.

Yu.A. Brusentsov, A.M. Minayev, Uchebnoje Posobiye, Tambov: Tambov Univ. State. Tech-nical. Press., (2002) 80.

H. Sato, T. Minami, S. Takata, T. Yamada, Thin Solid Films, 236 (1993) 27.

K.S. Ahn, Y.Ch. Nah, Y.E Sung, J. Vac. Sci. Technol. A, 20 (2002) 1468.

S.W. Park, J.M. Choi, E. Kim, Seongil Im, Applied Surface Sci., 244 (2005) 439.

D. Duygu Dogan, Yasemin Caglar, Saliha Ilican, Mujdat Caglar, J. Alloys and Comp., 509 (2011) 2461.

M. Martini, G.E.S. Brito, M.C.A. Fantini, A.F. Craievich, A. Gorenstein, Electrochimica Acta, 46 (2001) 2275.

A. Sawaby, M.S. Selim, S.Y. Marzouk, M.A. Mostafa, A. Hosny, Physica B, 405 (2010) 3412.

B.T. Raut, S.G. Pawar, M.A. Chougule, S. Sen, V.B. Patil, J. Alloys Compd. 509 (2011) 9065.

S. Banerjee, A. Santhanam, A. Dhathathreyan, P.M. Rao, Langmuir, 19 (2003) 5522.

W. Guo, K. N. Hui, K.S. Hui, Materials Letters, 92 (2013) 291.

H.A. Juybari, M.M. Bagheri-Mohagheghi, M. Shokooh-Saremi, J. Alloys and Comp. 509 (2011) 2770.

S.P. Srivatava, R.C. Srivatava, I.D. Shing, S.D. Pandey, P.L. Gupta, J. Phys Soc. Japan, 43, (1977) 885.

C.J. Toussaint, J. Appl. Crystallography, 4 (1971) 293.