Spectral properties of М-n+CdS-nCdSxTe1-x-pZnxCd1-xTe-Mo-structure for injection photoreceiver

Abstract

Photosensitive film structure of A2B6 compounds In-n+(CdS)-n(CdSxTe1-x)-p(ZnxCd1-xTe)-Mois created for wave range λ = 0,49-0,855 јm and for work at room temperatures. Novelty of the de-vice is presence of solid solutions A2B6, that allows to expand its spectral sensitivity range. The structure behaves as the photoreceivers with inversion of mark of photocurrent I(λ) if positive potential “+V” is enclosed to Мо- to contact. The inversion structure capable effectively to register without handicapes different waves of the visible spectral range. The structure increases a primary photocurrent at reverse bias, when potential “−V” is applied to Mo- contact. In this case the structure is a basis for creation of injection photoreceiver, which has high spectral photosensitivity in the visible spectral range.