Anthracene between layers of inorganic semiconductor: response on electric field and illumination

Abstract

Hryhorchak Properties of Anthracene С14Н10-guest clathrates with GaSe and InSe matrixes and theirs behavior at applied electric field and under illumination were investigated. The mechanism of X-ray diffraction spectra transformation for initial matrixes with Anthracene intecalation was determined. Features of current flow perpendicular to nanolayers were estimated with use of frequency dependent complex specific impedance technique. Impedance investigations of synthesized clathrate`s response on external electric field and illumination showed negative photodielectric effect and unusual oscillation behavior of real component of complex impedance under electrostatic field. Differences of InSe<С14Н10> nanostructure`s properties at photoelectretisation synthesis and at normal conditions were investigated.