Influence of the ultrasonic irradiation on properties of the injection sensor based on pSi-nCdS-n+CdS — structure and surface states densitY pSi-nCdS — heterojunction

Abstract

Determined distribution density of surface states depending on the magnitude of the surface potential at the nCdS/Si(p) heterojunction. It is established that ultrasonic processing of such photo diodes leads to reduction of the surface states density on the  heterojunction interface and raises the spectral and integral sensitivity of photodiodes.