Amplification processes in discharge cell consisting of the semiconductor plasma clean contacts

Authors

Keywords:

a semiconductor electrode ionization chamber, discharge gap, semi-insulating gallium arsenide, a photodetector, the current-voltage characteristic, plasma contact

Abstract

The article presents the results of theoretical calculations and experimental studies of the currentvoltage characteristics of crystals of gallium arsenide and cadmium telluride contacts with a plasma gas  discharge in the photographic system.

 

 

Author Biographies

  • Х. Т. Юлдашев, Ferghana Polytechnical Institute
    с.н.с.
  • З. Хайдаров, Ferghana Polytechnical Institute
    с.н.с.
  • Ш. С. Касымов, Ferghana Polytechnical Institute
    с.н.с.

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Published

2017-04-05

Issue

Vol. 1 No. 3 (2016): Журнал фізики та інженерії поверхні

Section

Статті

License

У відповідності з типовим шаблоном.

How to Cite

Amplification processes in discharge cell consisting of the semiconductor plasma clean contacts. (2017). Journal of Surface Physics and Engineering, 1(3), 268-273. https://periodicals.karazin.ua/pse/article/view/8314

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