Physical phenomena the transistor structure tonkobazovyh

Abstract

It is experimentally shown that the germanium p+np- and silicon n++pnn+-structures in blocking mode of the junction with a lightly doped region operate as the bipolar transistor with a corresponding operating range and photosensitivity. In the blocking mode of the junction with a heavily doped region they acquires improved photodiode and transistor properties associated with the expansion dynamics of the space charge regions and development of the tunnel and avalanche breakdown mechanisms.