Formation of a regular porous p-InP structure

Authors

  • Я. А. Сычикова Berdyansk State Pedagogical University image/svg+xml
  • В. В. Кидалов Berdyansk State Pedagogical University image/svg+xml
  • Г. А. Сукач Berdyansk State Pedagogical University image/svg+xml

Keywords:

porous InP; anode electrochemical etching; scanning electronic microscopy; energy dispersive X-ray spectroscopy

Abstract

The necessity of lighting p-InP samples during anodization in a solution of hydrochloric acid to obtain a uniform ensemble of pores on the surface of the crystal. The optimal conditions for the formation of regular structure of the porous layer of indium phosphide p-type. Obtain samples with a pore diameter of 30 – 40 nm. The formation of the oxide layer on the surface of the crystals was not observed, which is the desired outcome in obtaining nanomaterials.

Author Biographies

  • Я. А. Сычикова, Berdyansk State Pedagogical University

    Scientist

  • Г. А. Сукач, Berdyansk State Pedagogical University

    Scientist

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Published

2019-07-26

How to Cite

Formation of a regular porous p-InP structure. (2019). Journal of Surface Physics and Engineering, 8(1), 81-87. https://periodicals.karazin.ua/pse/article/view/13454

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