Physical properties of composite nanostructures formed on the basis of layered semiconductor p-GaSe and nanosized three-dimensional inclusions of ferroelectric KNO3

Abstract

Impedance spectra of the composite GaSe<KNO3> nanostructures are investigated in dark and under illumination. Dependence of the impedance spectra of the composite GaSe<KNO3> nanostructures on dc voltage under light illumination is associated with quantum-confinement effects under nanoscale deformation оf crystal and due to electronic flexoelectricity effect in curved nanoscale layered-crystal regions through vertical transport of carriers occurs. We have found an essential increase of electrical capacity of the composite nanostructures under their illumination. This phenomenon is attributed with screening of spontaneous polarization inside the nanoscale ferroelectric inclusions by the non-equilibrium charge carriers at interfaces between inclusions and GaSe matrix.