The microstructure of grain boundaries in polycrystalline silicon and its influence on the transfer of charge carriers

Authors

  • Б. М. Абдурахманов Andijan State University. Z.M. Babur
  • Л. О. Олимов Andijan State University. Z.M. Babur
  • Ф. Абдуразаков Andijan State University. Z.M. Babur

Keywords:

polycrystalline silicon; microstructure; grain; between grains boundaries; microvoids; oxygenated complexes; impurities; surface; metal or metal-oxide films; chemical element; segregation; resistivity

Abstract

Experimentally studied the microstructure and morphology of grain boundaries of polycrystalline silicon obtained by different methods. The surface of the grain size of 100 – 300 microns is replete with bumps and micro-sized voids ~10 microns. In between the grain boundaries are accumulations of impurities that determine the charge states with the temperature dependence of resistivity of polycrystalline silicon.

Author Biographies

  • Б. М. Абдурахманов, Andijan State University. Z.M. Babur

    PhD

  • Л. О. Олимов, Andijan State University. Z.M. Babur

    Scientist

  • Ф. Абдуразаков, Andijan State University. Z.M. Babur

    Scientist

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Published

2019-07-25

Issue

Vol. 8 No. 1 (2010): Physical surface engineering

Section

Статті

License

У відповідності з типовим шаблоном.

How to Cite

The microstructure of grain boundaries in polycrystalline silicon and its influence on the transfer of charge carriers. (2019). Journal of Surface Physics and Engineering, 8(1), 72-76. https://periodicals.karazin.ua/pse/article/view/13449

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