Tunable Negative Differential Resistance in SnO2:Co Memristors on p-Si
DOI:
https://doi.org/10.26565/2312-4334-2025-2-22Keywords:
SnO2 doped by cobalt, Memristor, Negative differential resistance switching, USPAbstract
This study investigates the negative differential resistance (NDR) phenomenon in cobalt-doped tin dioxide (SnO2:Co) memristors fabricated on p-type silicon substrates. Using ultrasonic spray pyrolysis (USP), crystalline SnO2:Co thin films were deposited on p-Si substrates with a thin native SiO2 layer. The resulting memristor devices exhibit reproducible bipolar resistive switching between high-resistance (HRS) and low-resistance states (LRS). Key findings include the observation of a distinct NDR region in the current-voltage (I-V) characteristics, specifically in the positive voltage range from approximately +3V to +4V. Within this NDR region, current decreases despite increasing voltage, a characteristic hallmark of this effect. This behavior is attributed to the charge trapping and redistribution within the Co:SnO2 material. The consistent and reproducible nature of the observed NDR effect suggests the potential of SnO2:Co memristors for applications in advanced memory and switching technologies. This work contributes to the understanding of resistive switching mechanisms in Co-doped SnO2 thin films, which are promising materials for next-generation memory devices.
References
X.B. Yan, et al., “Bipolar Resistive Switching Performance of The Nonvolatile Memory Cells Based on (AgI)0.2(Ag2MoO4)0.8 Solid Electrolyte Films,” J. Appl. Phys. 106, 054501 (2009). https://doi.org/10.1063/1.3211293
K. Kang, W. Hu, and X. Tang, “Halide Perovskites for Resistive Switching Memory,” J. Phys. Chem. Lett. 12, 48, 11673 11682 (2021). https://doi.org/10.1021/acs.jpclett.1c03408
W. Li, et al., “High On/Off Ratio Organic Resistive Switching Memory Based on Carbazolyl Dicyanobenzene and a Polymer Composit: The Journal of Phys. Chem. C, 126(30), 12897–12905 (2022). http://dx.doi.org/10.1021/acs.jpcc.2c03641
D. Ielmini, “Resistive Switching Memories Based on Metal Oxides: Mechanisms, Reliability and Scaling,” Semicond. Sci. Technol. 31, 063002 (2016). http://dx.doi.org/10.1088/0268-1242/31/6/063002
F.M. Simanjuntak, D. Panda, K.H. Wei, and T.Y. Tseng, “Status and Prospects of ZnO-Based Resistive Switching Memory Devices,” Nanoscale Research Letters, 11, 368 (2016). http://dx.doi.org/10.1186/s11671-016-1570-y
Sh. Abdullaev, D.J. Lee, Sh. Rano, and Sh.U. Yuldashev, “Negative Differential Resistance Effect in ZnMgO Memristor with SiO2 Thin Oxide Layer on p-Type Silicon,” Semiconductors Physics and Microelectronics, (2020). https://uzjournals.edu.uz/semiconductors/vol2/issue_2.html.
P.D. Walke, et al., “Memristive Devices from CuO Nanoparticles,” Nanomaterials, 10(9), 1677 (2020). https://doi.org/10.3390/nano10091677
K. Bandopadhyay, K.N. Prajapati, and J. Mitra, “Resistive Switching in Individual ZnO Nanorods: Delineating The Ionic Current By Photo-Stimulation,” Nanotechnology, 29, 105701 (2018). https://doi.org/10.1088/1361-6528/aaa63f
S.S. Li, and Y.K. Su, “Oxygen-Vacancy Induced Resistive Switching Effect In Mn-Doped ZnO Memory Devices,” Physica Status Solidi rrl, 13(2), 1800453 (2019). http://dx.doi.org/10.1002/pssr.201800453
Downloads
Published
Issue
Section
License
Authors who publish with this journal agree to the following terms:
- Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgment of the work's authorship and initial publication in this journal.
- Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgment of its initial publication in this journal.
- Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).
