Research of electric and photo-electric properties In-CdSxTe1-x-Si-In structures

Authors

Keywords:

solid solution, film, spectrum, photosensitivity

Abstract

It is made heterojunction n/Si-n/CdSxTe1-x by a method of a vacuum dusting of a film of firm solution CdSxTe1-x on a surface monocrystalline n/Si. The basic electric and photo-electric properties of heterojunction are investigated. Values of a constant crystal lattice of firm solution CdSxTe1-x on heterostructure border n/Si-n/ CdSxTe1-x are defined.

 

Author Biography

  • И. Б. Сапаев, Physical and Technical Institute
    с.н.с.

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Published

2017-07-28

Issue

Vol. 11 No. 2 (2013): Фізична інженерія поверхні

Section

Статті

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How to Cite

Research of electric and photo-electric properties In-CdSxTe1-x-Si-In structures. (2017). Journal of Surface Physics and Engineering, 11(2), 223-227. https://periodicals.karazin.ua/pse/article/view/8776

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