The temperature dependence of the band gap Si

Authors

  • G. Guliamov Namangan Engineering Pedagogical Institute Uzbekistan
  • U. I. Erkaboev Namangan Engineering Pedagogical Institute Uzbekistan
  • N. Y. Sharibaev Namangan Engineering Pedagogical Institute Uzbekistan Namangan Engineering Institute of Technology Uzbekistan

Keywords:

band gap, the effective density of states, the energy spectrum, the numerical simulation and experiment

Abstract

With the help of mathematical modeling of the thermal broadening of the energy levels studied the temperature dependence of the band gap semiconductors. In view of the temperature dependence of the effective mass of the density of states obtained graphs temperature dependence of the band gap. Investigated the effect of changes in the effective mass of charge carriers on the temperature dependence of the band gap semiconductors. The theoretical results of mathematical modeling are compared with experimental data for  Si. The theoretical results satisfactorily explain the experimental results for Si.

 

 

Author Biographies

  • G. Guliamov, Namangan Engineering Pedagogical Institute Uzbekistan
    с.н.с.
  • U. I. Erkaboev, Namangan Engineering Pedagogical Institute Uzbekistan
    с.н.с.
  • N. Y. Sharibaev, Namangan Engineering Pedagogical Institute Uzbekistan Namangan Engineering Institute of Technology Uzbekistan
    с.н.с.

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Published

2017-07-21

Issue

Vol. 11 No. 3 (2013): Фізична інженерія поверхні

Section

Статті

License

У відповідності з типовим шаблоном.

How to Cite

The temperature dependence of the band gap Si. (2017). Journal of Surface Physics and Engineering, 11(3), 289-292. https://periodicals.karazin.ua/pse/article/view/8762

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