Heterojunctions based on In4Se3 layered crystals

Abstract

Heterojunctions n-InSe–p-In4Se3 and p-InSe–n-In4Se3 were prepared by direct optical contact method. The topology of van der Waals surfaces of InSe and In4Se3 basis crystals were investigated by atomic force microscopy. The energy band diagram of the n-InSe–p-In4Se3 heterojunctions were constructed. It was found that the diode factor of n-InSe–p-In4Se3 heterojunctions had the value 1,1. The sensitivity spectral areas of n-InSe–p-In4Se3 and p-InSe–n-In4Se3 heterostructures were identified.