Distribution of chemical elements in the surface layer of the films implanted ions si+ with yttrium iron garnet

Abstract

We have presented an analysis surface implanted of ions Si+ with dose of 5 · 1013 sm–2 and the energies of 100—150 keV  of iron­yttrium garnet films obtained using X­ray photoelectron spectroscopy, established the relative content of major chemical elements in the surface layer, obtained information abo  ut the features of electronic states atoms on the surface, the valence and structural changes oc curring in the surface layer under implanted silicon with different energy.