Evolution of structure and mechanism of thermal decomposition of C/SI multilayers

Abstract

Structure and composition of C/Si periodical multilayers were investigated by means of low­angle X­ray diffraction, transmission electron microscopy and Raman spectroscopy at temperatures within 50—1050 °C range. In as­deposited state C/Si multilayer presents amorphous carbon and silicon layers divided by amorphous intermixing layers of different density. As the temperature increases, multilayer period changes as a result of increase of intermixing layers and carbon graphitization. At 700 °C silicon crystallization begins. At 800 °C crystalline SiC of cubic modification forms on basis of crystalline silicon. At 900—1000 °C destruction of multilayer periodical structure takes place.