About of the possibility of quantum interferential transitions and entanglement in vacancy and divacancy of silicon

Abstract

Annotation. Some characteristics of divacancy in silicon as a radiation bistable defect with the Jahn-Neller stabilization are analyzed. It is shown that by external influence, by change of some properties of material, of concentration of the entered defects and of the type of irradiation it is possible to influence purposefully on the parameters of these defect centers, that indicate on possibility of application of silicon with such centers for the creation of devices of the quantum informative systems.

On the basis of carried out analyses the assumption about of existence of interference transitions between quantum states of minima of adiabatic energy at certain conditions is suggested. It is pointed on generality of such approach and on the possibility of expansion of approach, used for the description of such transitions, on some other bistable defects.