he characteristic parameters of charge carriers in the p-type Si0.2Ge0.8 quantum well with two subbands occupied

Authors

  • I. B. Berkutov B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine, Prospect Nauky 47, Kharkov, 61103, Ukraine International Laboratory of High Magnetic Fields and Low Temperatures, 50-985 Wroclaw, Poland The University of Manchester, Oxford Road, Manchester M13 9PL, UK
  • V. V. Andrievskii 1 B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine, Prospect Nauky 47, Kharkov, 61103, Ukraine 2 International Laboratory of High Magnetic Fields and Low Temperatures, 50-985 Wroclaw, Poland
  • Yu. F. Komnik B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine, Prospect Nauky 47, Kharkov, 61103, Ukraine
  • Yu. A. Kolesnichenko B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine, Prospect Nauky 47, Kharkov, 61103, Ukraine
  • A. I. Berkutova B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine, Prospect Nauky 47, Kharkov, 61103, Ukraine Karazin National University, Svobody sq. 4, Kharkov, 61022, Ukraine Pavol Jozef Šafárik University in Košice, , Angelinum 9, Košice, 040 01, Slovak Republic
  • O. A. Mironov International Laboratory of High Magnetic Fields and Low Temperatures, 50-985 Wroclaw, Poland Department of Physics, University of Warwick, Coventry CV4 7AL, UK Ukrainian State University of Railway Transport Fejerbakha sq. , 7, Kharkiv, 61050, Ukraine
  • N. V. Gleyzer Ukrainian State University of Railway Transport Fejerbakha sq. , 7, Kharkiv, 61050, Ukraine

Keywords:

magnetoresistance, weak localization

Abstract

The kinetic characteristics of the two-dimensional system of charge carriers in the p-type heterostructure Si0.7Ge0.3/Si0.2Ge0.8/ Si0.7Ge0.3 in condition of two subbands occupied has been calculated. The density, mobility and the effective mass of the charge carriers in each subbands have been estimated. The effects of weak localization of charge carriers under the condition of strong spin-orbit influence have been analyzed. The phase relaxation time and the spin - orbit interaction of the charge carriers, as well as the value of spin splitting have been found. The results are in good agreement with available theoretical models.

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Published

2016-12-28

Issue

No. 23 (2015): Journal of V.N. Karazin Kharkiv National University, series "Physics"

Section

Articles

How to Cite

he characteristic parameters of charge carriers in the p-type Si0.2Ge0.8 quantum well with two subbands occupied. (2016). Journal of V. N. Karazin Kharkiv National University. Series Physics, 23, 52-56. https://periodicals.karazin.ua/physics/article/view/7775

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