Vacancy-fluorine clusters in silicon

Abstract

It is known that Fluorine (F) doping and formation of F-vacancy (FnVm) clusters (for n >4, m>1) in silicon (Si) can suppress the transient self-interstitial mediated diffusion of boron (B). Recent experimental studies have revealed that the concentration of FnVm clusters is insignificant, which is in disagreement with results of a number studies. In the present study we use electronic structure calculations to evaluate the binding energies of FnVm clusters and Vn clusters. Significant binding energies of the Vn clusters reveal that the concentration of the large FnVm clusters is limited if compared to that of Vn or even smaller clusters.