Incomplete Ionization Effects in C–V Characteristics of Radial p–n and p-i-n Junction Structures
DOI:
https://doi.org/10.26565/2312-4334-2026-3-52Keywords:
Radial p-n junction, Intrinsic layer, Silicon (Si), External factors, Capacity, Doping concentration, TemperatureAbstract
This work presents a comprehensive numerical investigation of incomplete dopant ionization effects on the capacitance–voltage (C‑V) response of radial p–n and p–i–n junctions fabricated from silicon (Si) and gallium arsenide (GaAs). A self-consistent finite element method (FEM) framework was developed to solve Poisson’s equation while explicitly incorporating temperature-dependent dopant ionization statistics. Simulations were performed for doping concentrations of 2×10¹⁵ cm⁻³ and 2×10¹⁶ cm⁻³ over a wide temperature range of 100–300 K. The results demonstrate a monotonic increase in junction capacitance with both dopant density and temperature, with capacitance variations exceeding 35–60% across the studied temperature interval, depending on material system and geometry. At 100–150 K, incomplete ionization reduces the effective carrier concentration by up to 48% in Si and 41% in GaAs at 2×10¹⁶ cm⁻³, leading to pronounced deviations in the C–V characteristics compared with conventional full-ionization assumptions. In contrast, at 300 K, the ionization efficiency exceeds 97%, rendering incomplete ionization effects negligible. Geometrical dependencies were evaluated for core radii of R = 0.5, 1.0, and 1.5 μm. Furthermore, p–i–n structures with intrinsic layer thicknesses of i = 0.1, 0.3, and 0.5 μm were analyzed at R = 1.5 μm, revealing that increasing the intrinsic region thickness suppresses the impact of incomplete ionization by reducing the space-charge sensitivity to dopant activation, lowering capacitance deviations by more than 30%. Two modeling regimes were systematically compared: (A) full dopant ionization and (B) temperature-dependent incomplete ionization.
References
Sh. Qian, S. Misra, J. Lu, Z. Yu, L. Yu, J. Xu. J. Wang, et al., Appl. Phys. Lett. 107, 043902 (2015). https://doi.org/10.1063/1.4926991
Z. Arefinia, A. Asgari, Solar Energy Materials and Solar Cells, 137, 146 (2015). https://doi.org/10.1016/j.solmat.2015.01.032
O.V. Pylypova, A.A. Evtukh, P.V. Parfenyuk, I.I. Ivanov, I.M. Korobchuk, O.O. Havryliuk, and O.Yu. Semchuk, Opto-Electronics Review, 27(2), 143 (2019). https://doi.org/10.1016/j.opelre.2019.05.003
R. Ragi, R.V.T. da Nobrega, U.R. Duarte, and M.A. Romero, IEEE Trans. Nanotechnol. 15(4), 627 (2016). https://doi.org/10.1109/TNANO.2016.2567323
R.D. Trevisoli, R.T. Doria, M. de Souza, S. Das, I. Ferain, and M.A. Pavanello, IEEE Trans. Electron Devices, 59(12), 3510 (2012). https://doi.org/10.1109/TED.2012.2219055.
J. Sh. Abdullayev, I. B. Sapaev, J. Sh. Abdullayev, D. A. Juraev, M. J. Jalalov, E. E. Elsayed, Journal of Electronic Materials, 54 (2025), 1–9. https://doi.org/10.1007/s11664-025-12391-8.
D.H.K. Murthy, T. Xu, W.H. Chen, A.J. Houtepen, T.J. Savenije, L.D.A. Siebbeles, et al., Nanotechnology, 22(31), 315710 (2011). https://doi.org/10.1088/0957-4484/22/31/315710
B. Pal, K.J. Sarkar, and P. Banerji, Solar Energy Materials and Solar Cells, 204, 110217 (2020). https://doi.org/10.1016/j.solmat.2019.110217
I. Aberg, G. Vescovi, D. Asoli, U. Naseem, J.P. Gilboy, C. Sundvall, and L. Samuelson, IEEE Journal of Photovoltaics, 6(1), 185 (2016). https://doi.org/10.1109/JPHOTOV.2015.2484967
P. Dubey, B. Kaushik, and E. Simoen, IET Circuits, Devices & Systems, (2019). https://doi.org/10.1049/iet-cds.2018.5169
M.-D. Ko, T. Rim, K. Kim, M. Meyyappan, and C.-K. Baek, Scientific Reports, 5(1), 11646 (2015). https://doi.org/10.1038/srep11646.
A.M. de Souza, D.R. Celino, R. Ragi, and M.A. Romero, Microelectronics J. 119, 105324 (2021). https://doi.org/10.1016/j.mejo.2021.105324.
J.Sh. Abdullayev, East European Journal of Physics, (1), 245-249 (2025). (https://doi.org/10.26565/2312-4334-2025-1-26).
Kutlieva, U. O., Sattarova, O. A., Setmetov, N. U., & Ismoilova, J. U. East European Journal of Physics, (3), 281–285 (2025). https://doi.org/10.26565/2312-4334-2025-3-25
Qalandarova, D. A., Ibragimova, M. Sh., Salayev, U. G., Sapayev, I. B., Manarajabov, D. S., Madolimov, A. M., & Sattarova, O. A. (2026). Incomplete dopant ionization effects in GaN optical photovoltaic converters over 4–400 K for space solar energy applications. East European Journal of Physics, (2), 232–238 (2026). https://doi.org/10.26565/2312-4334-2026-2-24
N.D. Akhavan, I. Ferain, P. Razavi, R. Yu, and J.-P. Colinge, Appl. Phys. Lett. 98(10), 103510 (2011). https://doi.org/10.1063/1.3559625.
A.V. Babichev, H. Zhang, P. Lavenus, F.H. Julien, A.Y. Egorov, Y.T. Lin, and M. Tchernycheva, Applied Physics Letters, 103(20), 201103 (2013). https://doi.org/10.1063/1.4829756.
Toktarbaily, O., Baysariev, M., Kaysha, A., Duisebaev, T., Ibraev, N., Serikov, T., Ibraimov, M., Khaniev, B., Tezekbay, Yu., Zhambyl, A., Nurazhe, N., and Sugurbekova, H. Eurasian Physical Technical Journal, 21(4(50), 131–139 (2024). (https://doi.org/10.31489/2024No4/131-139).
J.Sh. Abdullayev, Sapaev, I., Esanmuradova, N., Kadirov, S., & Kuliyev, S. East European Journal of Physics, (2), 220-225 (2025). (https://doi.org/10.26565/2312-4334-2025-2-24).
J.Sh. Abdullayev, Sapaev, I. B., & Kadirov, S. R. East European Journal of Physics, (2), 252-257 (2025). (https://doi.org/10.26565/2312-4334-2025-2-30).
Han, D.-P., Shin, D.-S., Shim, J.-I., Kamiyama, S., Takeuchi, T., Iwaya, M., & Akasaki, I. IEEE Journal of Quantum Electronics, 55(4), 1–11 (2019). https://doi.org/10.1109/JQE.2019.2917180
Makode, P. A., Muduli, S. P., & Kale, P. Materials Research Bulletin, 180, 113504 (2025). https://doi.org/10.1016/j.materresbull.2025.113504.
Abdullayev, J.S., Sapaev, I.B., Abdullayev, J.S. et al. J. Electron. Mater. 54, 10484–10492 (2025). https://doi.org/10.1007/s11664-025-12391-8
Abdullayev, J. S., Sapaev, I. B., Kadirov, S. R., & Abdullayev, J. Sh. Journal of Electronic Materials, 54(10), 11607–11617 (2025). https://doi.org/10.1007/s11664-025-12480-8
Sapaev, I. B., Razzokov, J. I., Abdullayev, J. S., Qalandarova, D. A., & Ibragimova, M. S. East European Journal of Physics, (4), 442-448 (2025). https://doi.org/10.26565/2312-4334-2025-4-44
Perera, M. M., Lin, M.-W., Chuang, H.-J., Chamlagain, B. P., Wang, C., Tan, X., Cheng, et al., ACS Nano, 7(5), 4449–4458 (2013). https://doi.org/10.1021/nn401053g
Abdullayev, J.S., Qalandarova, D.A., Ibragimova, M.S. et al., J. Electron. Mater. 55, 2229–2239 (2026). https://doi.org/10.1007/s11664-025-12642-8
Haris, M., Loan, S. A., & Mainuddin. Journal of Nanoelectronics and Optoelectronics, 14(10), 1434–1444 (2019). https://doi.org/10.1166/jno.2019.2575
Liang, J., Miyazaki, T., Morimoto, M., Nishida, S., Watanabe, N., & Shigekawa, N. Applied Physics Express, 6(2), 021801 (2013). https://doi.org/10.7567/APEX.6.021801
Strzelecka, S., Pawlowska, M., Hruban, A., Gladysz, M., Wegner, E., Gladki, A., & Orlowski, W. in: Solid State Crystals: Growth and Characterization, edited by J. Zmija, A. Majchrowski, J. Rutkowski, & J. Zielinski, Vol. 3178, (SPIE, 1997), pp. 238–241. https://doi.org/10.1117/12.280741
Yu, T., Zhang, H., Li, D., & Lu, Y. RSC Advances, 11, 16040–16050 (2021). https://doi.org/10.1039/D1RA01959G
Sushkov, A. A., Pavlov, D. A., Andrianov, A. I., Shengurov, V. G., Denisov, S. A., Chalkov, V. Y., Kriukov, R. N., et al., Semiconductors, 56, 122–133 (2022). https://doi.org/10.1134/S106378262201012X
Yamaguchi, M., Takamoto, T., Juso, H., Nakamura, K., Ozaki, R., & Kojima, N. in: Proceedings of the 2024 IEEE 52nd Photovoltaic Specialist Conference (PVSC), (IEEE, 2024). https://doi.org/10.1109/PVSC57443.2024.10749502
Šagátová, A., Novák, A., Kováčová, E., Riabukhin, O., Kotorová, S., & Zaťko, B. AIP Conference Proceedings, 2778, 060009 (2023). https://doi.org/10.1063/5.0137383
Liang, J., Chai, L., Nishida, S., Morimoto, M., & Shigekawa, N. Japanese Journal of Applied Physics, 54(3), 030211 (2015). https://doi.org/10.7567/JJAP.54.030211
Kamolov, J. J., Mirzayev, M. S., Fayziyev, Sh. Sh., & Samiev, K. A. in: BIO Web of Conferences, 84, 05019 (2024). https://doi.org/10.1051/bioconf/20248405019
Cressler, J. D. IEEE Transactions on Nuclear Science, 60(3), 1992–2014 (2013). https://doi.org/10.1109/TNS.2013.2248167
Kamolov, J., Kakhkhorov, O., Niyozov, A., Ruzieva, M., & Arslonov, Q. in: Optical and Computational Technologies for Measurements and Industrial Applications (OptiComp 2025) (Proceedings of SPIE), vol. 13803, (SPIE, 2025). Article 1380315. https://doi.org/10.1117/12.3078035
Geng, P., Li, W., Zhang, X., Zhang, X., Deng, Y., & Kou, H. Journal of Physics D: Applied Physics, 50(40), 40LT02 (2017). https://doi.org/10.1088/1361-6463/aa85ad
Pässler, R. Physica Status Solidi (b), 236(3), 710–728 (2003). https://doi.org/10.1002/pssb.200301752
Yamada, A., Matsubara, K., Sakurai, K., Ishizuka, S., Hajime, H. T., Tomoyuki Baba, S., Kimura, Y., et al., MRS Proceedings, 865, (2005). https://doi.org/10.1557/PROC-865-F5.19
Downloads
Published
Issue
Section
License
Authors who publish with this journal agree to the following terms:
- Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgment of the work's authorship and initial publication in this journal.
- Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgment of its initial publication in this journal.
- Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).
