Synthesis of TiSiN coatings by simultaneous sputtering of Ti and Si targets in nitrogen-argon plasma

Abstract

Technique of doping TiN coatings by simultaneous sputtering of Ti and Si targets by nitrogen and argon ions generated from the gas plasma source (GPS) was developed. The highest value of hardness (∼33 GPa) was achieved at the CSi ∼ 7 wt%. The etching rate of Si and Ti, compared to sputtering in pure argon, are decreased due to the formation on their surfaces resistant to sputtering compounds ∼10 and ∼7, respectively. XRD analysis showed that the surface of the Ti target contains hexagonal titanium nitride (TiN0,3). At diffractogram of Si target there is only one line of Si (111). The depth of the modified layer of Ti is over 3 мm and for Si < 0,5 microns.