Supercooling during crystallization of bismuth in multilayer film Cu-Bi-Cu AND C-Bi-C

Abstract

The paper, with the methods of measurement of electrical resistance and in situ electron diffraction, was studied the phase transitions melting-crystallization in thin layers of bismuth, that are located between thick continuous films of copper and carbon. It has been determined the value of limiting supercooling during the crystallization of bismuth in contact with copper and carbon. There has been detected the differences in the kinetics of crystallization of a melt of bismuth in the copper and carbon matrixes which are caused by the various contact interaction of the components.