Electrical properties of inter grain boundaries in volume of polycrystalline silicon

Abstract

In work geometric parameters and the electrical properties of grain boundaries in volume polycrystalline silicon studied. The Found changing the direction of the temperature dependence of the conductivity of grain boundaries in the temperature range ~300 ÷ 900 K. This is explained by the manifestation of recombination centers. The proposed ideas and the results are of interest in the study of polycrystalline and nanocrystalline semiconductors.