The heating of electrons and holes in an asymmetric p-n-junction, located in the microwave field

Authors

  • М. Г. Дадамирзаев Наманганский инженерно-педагогический институт Физико-технический институт

Keywords:

hot electron asymmetric p-n-transition Seebeck coefficient of coupling

Abstract

Studied currents and EMF arising pn-junctions under the influence of a strong microwave field with the simultaneous heating of electrons and holes. Revealed that, in asymmetric p-n-junction in a strong microwave field for the analysis of voltage and current necessary to consider both the heating of the electrons and holes. Found that the total current and the generated voltage is not the temperature of hot electrons, and the temperature of the media, which are dominant.

 

Author Biography

  • М. Г. Дадамирзаев, Наманганский инженерно-педагогический институт Физико-технический институт
    с.н.с.

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Published

2017-07-28

Issue

Vol. 11 No. 2 (2013): Фізична інженерія поверхні

Section

Статті

License

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How to Cite

The heating of electrons and holes in an asymmetric p-n-junction, located in the microwave field. (2017). Journal of Surface Physics and Engineering, 11(2), 191-194. https://periodicals.karazin.ua/pse/article/view/8770

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